- Tytuł:
- Formation of Submicron $n^{+}$-Layers in Silicon Implanted with $H^{+}$-Ions
- Autorzy:
-
Pokotilo, Y.
Petukh, A.
Giro, A.
Węgierek, P. - Powiązania:
- https://bibliotekanauki.pl/articles/1504013.pdf
- Data publikacji:
- 2011-07
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.80.Jh
81.05.Cy
81.40.Wx - Opis:
- Formation of submicron $n^{+}$-layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450°C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of $n^{+}$-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy Δ $E_1$ = 2.3 eV, the pre-exponential factor $τ_{01}$ = 9.1 × $10^{-17}$ s, the ultimate concentration $N_{01}$ = (1 ± 0.1) × $10^{16} cm^{-3}$; Δ $E_2$ = 1.4 eV, $τ_{02}$ = 4.2 × $10^{-9}$ s, $N_{02}$ = (3 ± 0.1) × $10^{16} cm^{-3}$. Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.
- Źródło:
-
Acta Physica Polonica A; 2011, 120, 1; 129-132
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł