- Tytuł:
- Lattice Deformation Studies in Silicon Implanted with High-Energy Protons
- Autorzy:
-
Wieteska, K.
Dłużewska, K.
Wierzchowski, W. - Powiązania:
- https://bibliotekanauki.pl/articles/1945258.pdf
- Data publikacji:
- 1996-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.10.-i
61.80.-x - Opis:
- The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.
- Źródło:
-
Acta Physica Polonica A; 1996, 89, 3; 395-400
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł