- Tytuł:
- Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure
- Autorzy:
-
Pietnoczka, A.
Bacewicz, R.
Slupinski, T.
Antonowicz, J.
Wei, Su-Huai - Powiązania:
- https://bibliotekanauki.pl/articles/1431547.pdf
- Data publikacji:
- 2012-04
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.05.cj
61.72.uj - Opis:
- The annealing of heavily doped GaAs:Te can significantly change the free electron concentration in a reversible manner. These changes of electrical properties are accompanied by the structural changes of GaAs:Te solid solution. We used X-ray Absorption Fine Structure at K-edge of tellurium to determine local changes around Te atoms for different states of the GaAs:Te crystals caused by the annealing corresponding to different electron concentrations. The best EXAFS fit for the samples with high electron concentration was obtained for the substitutional $Te_{As}$ model with elongated Te-Ga bonds (as compared to the As-Ga distance). For the samples in the low concentration state the best fit was for the pairs of Te atoms forming a rhombohedral symmetry double-DX centre, with the proportional admixture of the substitutional tellurium
- Źródło:
-
Acta Physica Polonica A; 2012, 121, 4; 879-882
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł