- Tytuł:
- Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals
- Autorzy:
-
Friedrich, J.
Stockmeier, L.
Müller, G. - Powiązania:
- https://bibliotekanauki.pl/articles/1399427.pdf
- Data publikacji:
- 2013-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.10.Aj
61.72.S-
61.72.uf
81.10.Fq - Opis:
- This study analyses the phenomenon of constitutional supercooling, which is one of the major problems in industrial growth of heavily doped ($ > 10^{20} \text{atoms}//cm^3$) silicon crystals by the Czochralski technique. The systematic study is based on theoretical models and experimental data considering the effect of three important dopants (B, P, and As) in dependence of the relevant growth parameters for the Czochralski process. Based on these results, conclusions will be drawn for the stability limits of the Czochralski growth of dislocation-free heavily doped silicon crystals in dependence of the doping species and their concentration.
- Źródło:
-
Acta Physica Polonica A; 2013, 124, 2; 219-226
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł