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Wyświetlanie 1-4 z 4
Tytuł:
Study of Point Defect Distributions in Tantalum
Autorzy:
Djaafri, A.
Kadoun, A.
Driss-Khodja, M.
Elias, A.
Djaafri, T.
Powiązania:
https://bibliotekanauki.pl/articles/1029821.pdf
Data publikacji:
2018-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Bg
61.80.Ed
61.72.jj
61.72.jn
Opis:
We have investigated the point defect distributions in tantalum under irradiation by means of the Marlowe code based on the binary collision approximation. The study is carried out by simulating displacement cascades initiated with primary knock-on atom energies ranging from 5 to 20 keV. The Molière, Born-Mayer and average modified Lenz-Jensen potentials are used to describe the interactions between tantalum atoms. We have examined the creation of damage, the spatial defects distribution, and the vacancy clustering in tantalum. The results show that with an appropriate recombination radius, less than 16% of the created defects constitute permanent Frenkel pairs. Spatial configuration of defects indicates a separation between the two point defect types, vacancies and interstitials. The Molière potential favors the production of a greater number of displaced atoms and the development of voluminous cascades more than the other potentials. The cascade volume distributions deviate clearly from a Gaussian distribution. They are large and very stretched toward higher volumes for all used potentials. Only small vacancy clusters are formed in tantalum under irradiation and about 41% of the produced vacancies are considered as isolated
Źródło:
Acta Physica Polonica A; 2018, 133, 1; 39-44
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Frequency Domain Relaxation Processes in Gallium Doped CdTe and $Cd_{0.99}Mn_{0.01}Te$
Autorzy:
Trzmiel, J.
Płaczek-Popko, E.
Zielony, E.
Gumienny, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1791364.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
61.72.jj
77.22.-d
Opis:
The dielectric response of gallium doped $Cd_{0.99}Mn_{0.01}Te$ and CdTe alloys possessing DX centers was studied by impedance spectroscopy. Complex modulus and impedance spectroscopic plots were analyzed. Near ideal Debye response of CdTe:Ga was observed, whereas for $Cd_{0.99}Mn_{0.01}Te:Ga$ samples non-Debye behavior was stated. Different relaxation responses may be related to various local atomic configurations in the vicinity of the DX centers in the studied materials.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 956-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and $Cd_{0.99}Mn_{0.01}Te$
Autorzy:
Trzmiel, J.
Płaczek-Popko, E.
Weron, K.
Szatkowski, J.
Wojtyna, E.
Powiązania:
https://bibliotekanauki.pl/articles/1812001.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
61.72.jj
78.20.Bh
Opis:
The low temperature non-exponential transients of photoconductivity build-up in gallium doped $Cd_{0.99}Mn_{0.01}Te$ and CdTe alloys possessing DX centers were studied. It was found that the two-exponential model commonly used to explain the persistent photoconductivity growth in semiconductors with DX centers describes properly solely the photokinetics obtained for CdTe:Ga. In the case of $Cd_{0.99}Mn_{0.01}Te:Ga$ the stretched-exponential approach is more appropriate, for it explains the short-time power-law exhibited by the experimental data.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1417-1420
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
LT-InGaAs Layer Grown for Near Surface SESAM Application
Autorzy:
Jasik, A.
Muszalski, J.
Kosmala, M.
Pierściński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1807666.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.jj
68.55.ag
68.65.Ac
81.15.Hi
81.65.Rv
Opis:
We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-56-S-59
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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