- Tytuł:
- LT-InGaAs Layer Grown for Near Surface SESAM Application
- Autorzy:
-
Jasik, A.
Muszalski, J.
Kosmala, M.
Pierściński, K. - Powiązania:
- https://bibliotekanauki.pl/articles/1807666.pdf
- Data publikacji:
- 2009-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.jj
68.55.ag
68.65.Ac
81.15.Hi
81.65.Rv - Opis:
- We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.
- Źródło:
-
Acta Physica Polonica A; 2009, 116, S; S-56-S-59
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł