- Tytuł:
- Vacancy-Fluorine Clusters in Silicon
- Autorzy:
-
Chroneos, A.
Vovk, R.
Goulatis, I.
Nazyrov, Z.
Pinto Simoes, V.
Januszczyk, M.
Latosińska, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1504564.pdf
- Data publikacji:
- 2011-06
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
31.15.es
61.72.jd
61.72.uf
61.72.Yx - Opis:
- Fluorine (F) doping and the formation of F-vacancy $(F_{n}V_{m})$ clusters have been extensively studied in silicon (Si) as they can suppress the transient self-interstitial mediated diffusion of boron (B). Recent experimental studies by Bernardi et al. revealed that there is no significant concentration of $F_{n}V_{m}$ clusters (for n ≥ 4, m ≥ 1) in disagreement with a number of density functional theory studies. In the present study we use electronic structure calculations to evaluate the binding energies of $F_{n}V_{m}$ clusters and $V_{n}$ clusters. The significant binding energies of the $V_{n}$ clusters reveals that the concentration of the large $F_{n}V_{m}$ clusters (n ≥4, m ≥1) will be limited compared to the $V_{n}$ clusters or even smaller clusters.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 6; 774-777
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł