- Tytuł:
- Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry
- Autorzy:
-
Misiuk, A.
Härtwig, J.
Prieur, E.
Ohler, M.
Bąk-Misiuk, J.
Domagała, J.
Surma, B. - Powiązania:
- https://bibliotekanauki.pl/articles/1964154.pdf
- Data publikacji:
- 1997-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.Yx
81.40.Vw
61.10.-i - Opis:
- The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
- Źródło:
-
Acta Physica Polonica A; 1997, 91, 5; 987-991
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł