Temat: 61.72.-y - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Detection of "exotic" dopant-related macrodefects in vapour grown CdTe:Cr single crystals
Autorzy:: Popovych, V.
Sagan, P.
Powiązania:: https://bibliotekanauki.pl/articles/1075546.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.50.-f
61.72.-y
61.72.Vv
Opis:: SEM observation of non-typical macrodefects in the form of needle-like second phase particles in highly doped CdTe:Cr single crystals, grown by the modified physical vapour transport method, was reported. They form regular network parallel to the {111} and {100} planes. In the combined analyses using energy dispersive X-ray profiling and high-angle annular dark-field elemental mapping, it has been determined that the observed needle-like aggregates are composed of Cr-Te intermetallic compound, most probably cadmium doped Cr₃Te₄.
Źródło:: Acta Physica Polonica A; 2016, 129, 1; 49-51
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Dopants in Semiconductors Studied by Perturbed Angular Correlation
Autorzy:: Bartels, J.
Lorenz, K.
Ruske, F.
Tessema, G.
Vianden, R.
Powiązania:: https://bibliotekanauki.pl/articles/2028909.pdf
Data publikacji:: 2001-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Vv
61.72.Tt
81.40.Ef
76.80.+y
Opis:: The γ-γ perturbed angular correlation technique is a very powerful tool for the investigation of dopant incorporation and damage recovery after implantation in semiconductors. The basic principles of the technique will be introduced followed by a discussion of its strengths and limitations. Examples of its application will be given, ranging from cavities in silicon, effects of uniaxial stress on acceptor-donor pairs in silicon to damage recovery in nitride semiconductors like GaN.
Źródło:: Acta Physica Polonica A; 2001, 100, 5; 585-602
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Lattice Constant of Doped Semiconductor
Autorzy:: Leszczyński, M.
Litwin-Staszewska, E.
Suski, T.
Bąk-Misiuk, J.
Domagała, J.
Powiązania:: https://bibliotekanauki.pl/articles/1933910.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Vv
65.70.+y
Opis:: The paper shows an influence of doping on lattice constant of a semiconductor. Three effects are discussed: (i) "size" effect caused by a different ionic radii of dopant and host atoms, (ii) lattice expansion by free electrons proportionally to the deformation potential of the conduction-band minimum occupied by this charge, (iii) different thermal expansion of the undoped and doped samples. The experiments have been performed by using the high resolution X-ray diffraction at 77-770 K on AlGaAs:Te and GaAs:Si.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 837-840
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Polarity Related Problems in Growth of GaN Homoepitaxial Layers
Autorzy:: Leszczyński, M.
Prystawko, P.
Śliwinski, A.
Suski, T.
Litwin-Staszewska, E.
Porowski, S.
Paszkiewicz, R.
Tłaczała, M.
Beaumont, B.
Gibart, P.
Barski, A.
Langer, R.
Knap, W.
Frayssinet, E.
Powiązania:: https://bibliotekanauki.pl/articles/1991873.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Vv
65.70.+y
Opis:: Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 427-430
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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