Temat: 61.72.Nn - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Image Force Effect on the Separation of Partial Dislocations in Bicrystals of Hexagonal Structure Zn-Tl and Zn-Be
Autorzy:: Ayadi, A.
Khalfallah, O.
Powiązania:: https://bibliotekanauki.pl/articles/1399804.pdf
Data publikacji:: 2013-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Lk
61.72.Mm
61.72.Nn
62.20.D-
Opis:: We study the elastic interaction between a pair of partial dislocations, resulting from the dissociation of a perfect dislocation, and a bimetallic interface. The forces that act on two partials dislocations are the forces due to elastic interaction between the partial and image forces due to interactions of partial dislocations with interface. We are interested in the effect of image force on width of the stacking fault ribbon between two Schockley partials. We show that the separation of two partials dislocations is modified compared to that in the single crystal. It depends on the ratio of shear modulus and the distance between the interface and the dislocation.
Źródło:: Acta Physica Polonica A; 2013, 123, 2; 302-303
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Some Recent Results on the 3C-SiC Structural Defects
Autorzy:: Mantzari, A.
Andreadou, A.
Marinova, M.
Polychroniadis, E.
Powiązania:: https://bibliotekanauki.pl/articles/1491273.pdf
Data publikacji:: 2012-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.37.Lp
68.37.Og
61.72.Nn
61.72.Mm
Opis:: This work presents some recent results on the 3C-SiC structural defects, studied by transmission electron microscopy. The samples were grown in several laboratories, using different methods. There has always been special attention to the region close to the interface between the seed and the overgrown material. This is due to the fact that this region is very important to the evolution of defects during growth. The main defects in SiC are micropipes, double position boundaries, stacking faults and dislocations. The defects that are most frequently observed in 3C-SiC and more difficult to eliminate are inclusions of other polytypes, twins and microtwins and mainly stacking faults.
Źródło:: Acta Physica Polonica A; 2012, 121, 1; 187-189
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Electron Microscopy and X-ray Structural Investigations of Incommensurate Spin-Ladder Sr$\text{}_{4.1}$Ca$\text{}_{4.7}$Bi$\text{}_{0.3}$Cu$\text{}_{17}$O$\text{}_{29}$ Single Crystals
Autorzy:: Dłużewski, P.
Pietraszko, A.
Kozłowski, M.
Szczepańska, A.
Górecka, J.
Baran, M.
Leonyuk, L.
Babonas, G.-J.
Lebedev, O.
Szymczak, R.
Powiązania:: https://bibliotekanauki.pl/articles/2014560.pdf
Data publikacji:: 2000-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Nn
61.72.Mm
74.72.-h
61.16.Bg
61.10.-i
Opis:: Transmission electron microscopy and X-ray diffraction proved chain ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3° around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
Źródło:: Acta Physica Polonica A; 2000, 98, 6; 729-737
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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