- Tytuł:
- Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers
- Autorzy:
-
Leszczyński, M.
Teisseyre, H.
Suski, T.
Grzegory, I.
Boćkowski, M.
Jun, J.
Pałosz, B.
Porowski, S.
Pakuła, K.
Baranowski, J. M.
Barski, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1952040.pdf
- Data publikacji:
- 1996-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.Ji
61.72.Vv - Opis:
- Thermal expansion of gallium nitride was measured using high resolution X-ray diffraction. The following samples were examined: (i) single monocrystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers. The main factor influencing both, the lattice parameters and the thermal expansion coefficient, are free electrons related to the nitrogen vacancies. The origin of an increase in the lattice constants by free electrons is discussed in terms of the deformation potential of the conduction-band minimum. An increase of the thermal expansion by free electrons is explained by a decrease of elastic constants.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 5; 887-890
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł