- Tytuł:
- Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
- Autorzy:
-
Klinger, D.
Kret, S.
Auleytner, J.
Żymierska, D. - Powiązania:
- https://bibliotekanauki.pl/articles/2035498.pdf
- Data publikacji:
- 2002-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.Cc
61.72.Ff
61.72.Ji
61.72.Nn
61.80.Ba - Opis:
- An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
- Źródło:
-
Acta Physica Polonica A; 2002, 102, 2; 259-264
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł