Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "61.72.J-" wg kryterium: Temat


Tytuł:
Precipitation Effects in Mg-Zn Alloys Studied by Positron Annihilation and Hardness Testing
Autorzy:
Hruška, P.
Čížek, J.
Vlček, M.
Melikhova, O.
Procházka, I.
Powiązania:
https://bibliotekanauki.pl/articles/1196079.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
61.72.J-
Opis:
In the present work positron annihilation spectroscopy combined with Vickers hardness testing were employed in order to investigate precipitation effects in Mg-Zn alloys. It was found that incoherent precipitates of a metastable Zn-rich phase formed in the samples isochronally annealed above 200C cause hardening of the alloy.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 718-721
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Precipitation Effects in Mg-Tb and Mg-Tb-Nd Alloys
Autorzy:
Vlček, M.
Čížek, J.
Melikhova, O.
Hruška, P.
Procházka, I.
Powiązania:
https://bibliotekanauki.pl/articles/1196115.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
61.72.J-
Opis:
Investigation of precipitation effects in solution treated Mg-Tb and Mg-Tb-Nd alloy was performed. Solution treated alloys were compared with samples deformed by high pressure torsion to examine influence of deformation on precipitation effects. Dislocations present in samples processed by high pressure torsion can serve as diffusion channels for atoms and also as nucleation sites for precipitates. Therefore precipitation of some phases in high pressure torsion deformed samples was observed at lower temperatures than in solution treated ones.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 744-747
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defects Studies of ZnO Single Crystals Prepared by Various Techniques
Autorzy:
Lukáč, F.
Čížek, J.
Procházka, I.
Melikhova, O.
Anwand, W.
Brauer, G.
Powiązania:
https://bibliotekanauki.pl/articles/1196118.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
61.72.J-
Opis:
The aim of the present work was a comparison of defects in ZnO crystals grown by various techniques available nowadays, namely hydrothermal growth, pressurized melt, Bridgman method growth and vapor phase growth. Positron annihilation spectroscopy was employed as a principal tool for characterization of defects in ZnO crystals grown by above mentioned various techniques. ZnO crystals can be divided into two groups: (i) hydrothermal grown crystals, which exhibit positron lifetime of 179-182 ps and (ii) ZnO crystals grown by the other techniques (pressurized melt, Bridgman method, vapor phase growth) which are characterized by the lower lifetimes falling in the range of 160-173 ps. Comparison of experimental data with ab initio theoretical calculations revealed that HT grown ZnO crystals contains Zn vacancies associated with hydrogen atom in a bond-centered site. On the other hand, ZnO crystals prepared by other techniques contain most probably stacking faults created by stresses induced by temperature gradients in the melt.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 748-751
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanoscale deformation of GaAs affected by silicon doping
Autorzy:
Majtyka, A.
Nowak, R.
Chrobak, D.
Powiązania:
https://bibliotekanauki.pl/articles/1112264.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.kg
61.72.J-
Opis:
Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1127-1130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Point Defects in Magnesium Aluminates Spinel Ceramics Doped with Lithium Fluoride
Autorzy:
Gritsyna, V.
Kazarinov, Yu.
Moskvitin, A.
Reimanis, I.
Powiązania:
https://bibliotekanauki.pl/articles/1550494.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Je
61.72.J-
Opis:
The nature and topological distribution of optical centers within various regions of hot pressed disks of transparent magnesium aluminates spinel ceramics doped with LiF were studied. In the optical absorption spectra of this type of ceramic, bands were revealed at 4.75 eV and 5.3 eV, which were identified with $F^{+}-$ and F-centers, respectively. Because both bands are formed by anionic vacancies which captured one or two electrons, the topological distribution of anionic vacancies was determined. The band at 5.65 eV was also found which is tentatively identified with complex centers of anionic vacancies that capture fluorine ions and electrons. Using X-ray irradiation the variety of absorption bands of hole centers related to cationic vacancies was established. The spatial distribution of cationic vacancies within the ceramic disk was also determined.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 161-165
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons
Autorzy:
Gaubas, E.
Kadys, A.
Uleckas, A.
Vaitkus, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813194.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.J-
61.82.Fk
72.40.+w
Opis:
Variations of recombination lifetime, with fluence of the reactor neutrons from $10^{12}$ to $3×10^{16} n//cm^2$, in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (≤80°C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 829-832
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Oxide-Dispersion-Strengthened Ferritic Steels after Ion Implantation
Autorzy:
Simeg Veternikova, J.
Korhonen, E.
Skarba, M.
Degmova, J.
Sabelova, V.
Sojak, S.
Slugen, V.
Powiązania:
https://bibliotekanauki.pl/articles/1336688.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
68.55.Ln
61.72.J-
Opis:
This paper is focused on four different commercial oxide-dispersion-strengthened ferritic steels (MA 956, ODM 751, MA 957 and ODS Eurofer) with different chromium content and the change of their microstructure after helium ion implantation. The samples were implanted with kinetic energy of ions up to 500 keV and the implantation depth was up to 1.2 μm. The implantation was performed at Institute of Nuclear and Physical Engineering, Slovak University of Technology in Bratislava. The samples were observed prior and after the implantation by positron Doppler broadening spectroscopy with slow positron beam (energy up to 36 keV) which is one of the most suitable techniques due to its sensitivity to surface and subsurface layers up to 1.6 μm. The results showed visible change of defect presence in all samples and defect depth profiles are in a good accordance with SRIM software calculations displaying the Bragg peak. According to measured data, ODS Eurofer (9% Cr) seems to be the most radiation resistant from the group of all investigated steels and MA 956 (20% Cr) as the most radiation affected steel.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 741-743
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Grain Boundary Structure in Metals and Semiconductors as Probed by Positrons
Autorzy:
Kuriplach, J.
Powiązania:
https://bibliotekanauki.pl/articles/1196087.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.60.+z
61.72.Mm
61.72.J-
78.70.Bj
Opis:
Vacancy behavior and positron trapping at selected grain boundaries in iron, nickel, and zirconia are investigated theoretically. It is found that the grain boundary vacancy loses its free volume in metals at moderate temperatures whereas it is kept up to very high temperatures in zirconia. The consequences of these findings for positron annihilation studies of nanocrystalline materials are discussed.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 722-725
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Native Deep-Level Defects in MBE-Grown p-Type CdTe
Autorzy:
Olender, K.
Wosiński, T.
Mąkosa, A.
Dłużewski, P.
Kolkovsky, V.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1492964.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
68.37.Lp
61.72.J-
61.72.Lk
Opis:
Deep-level transient spectroscopy was used to study the defect levels in p-type CdTe layers grown by the molecular-beam epitaxy technique on lattice-mismatched GaAs substrates. In our measurements we have observed five hole traps. Two of the traps, displaying exponential capture kinetics, have been assigned to native point defects, the Cd vacancy and a complex formed of Cd vacancy and Te antisite, produced in the CdTe layers during their growth. The other two traps have been attributed to electronic states of threading dislocations on the ground of their logarithmic capture kinetics. The last trap, which was observed only when the investigated space charge region was close to the metal-semiconductor interface, has been ascribed to surface states.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 946-949
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
EPR Investigations of Electrons and Neutrons Irradiated Cubic Boron Nitride
Autorzy:
Azarko, I.
Ignatenko, O.
Karpovich, I.
Odzhaev, V.
Kozlova, E.
Zhukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400479.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.-v
81.05.Ea
61.72.J-
Opis:
Microcrystals of cubic boron nitride powders synthesised under different conditions and further irradiated with neutrons and electrons have been investigated. It was found that some changes of the samples' paramagnetic properties depend on the electron irradiation dose. It was also shown that the initial boron type defects growth occurs under thermal neutron, as well as under fast neutrons irradiation. The nitrogen-containing defects concentration changes in a threshold manner.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 923-925
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Study of Point Defects in the B2-Phase Region of the Fe-Al System by Mössbauer Spectroscopy
Autorzy:
Hanc, A.
Kansy, J.
Dercz, G.
Pająk, L.
Oleszak, D.
Mrzigod, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811589.pdf
Data publikacji:
2008-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Bb
61.72.J-
76.80.+y
Opis:
In this work, we employed the Mössbauer spectroscopy and X-ray powder diffraction in a study of point defect formation in intermetallic phases of the B2 structure of the Fe-Al system as a function of Al concentration. The results are compared with the concentrations of point defect determined from positron annihilation data. In the Mössbauer effect, two types of samples are investigated: Fe-Al alloys with few additives obtained by induction melting and Al-rich metallic powders produced by the self-decomposition method and intensive grinding of high energy in the electro-magneto-mechanical mill. We present the values of the $\text{}^{57}Fe$ isomer shift and quadrupole splitting for the components describing the point defect in the local environment of a Mössbauer nuclide. The concentration of the Fe vacancies and Fe atoms substituting Al (Fe-AS) are determined. The results showed that an increase in Al content causes an increase in vacancy and Fe-AS concentration.
Źródło:
Acta Physica Polonica A; 2008, 114, 6; 1555-1562
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Induced Absorption in Gadolinium Gallium Garnet Irradiated by High Energy $\text{}^{235}U$ Ions
Autorzy:
Potera, P.
Ubizskii, S.
Sugak, D.
Schwartz, K.
Powiązania:
https://bibliotekanauki.pl/articles/1550538.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.jn
81.40.Wx
61.80.Ba
61.80.Jh
61.72.J-
Opis:
The present work is devoted to investigation of optical absorption in pure $Gd_{3}Ga_{5}O_{12}$ (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the $\text{}^{235}U$ ions irradiation with energy 2640 MeV and a fluence $10^{9}-10^{11} cm^{-2}$. The induced absorption for $10^{9} cm^{-2}$ is caused by recharging of point defects, both growth ones and impurities. After irradiation by $\text{}^{235}U$ ions with fluences starting from $3 \times 10^{9} cm^{-2}$ the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 181-183
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Hall Effect in $Ge_{1-x-y}Pb_{x}Mn_{y}Te$ Composite System
Autorzy:
Podgórni, A.
Kilanski, L.
Dobrowolski, W.
Górska, M.
Domukhovski, V.
Brodowska, B.
Reszka, A.
Kowalski, B.
Slynko, V.
Slynko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1376191.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.J-
72.80.Ga
75.40.Mg
75.50.Pp
Opis:
The purpose of this study was to investigate the magnetotransport properties of the $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature $T_{SG}$=97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p=6.6×$10^{20}$ $cm^{-3}$, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect with hysteresis loops. Calculated anomalous Hall effect coefficient, $R_{S}$ = 2.0×$10^{6}$ $m^{3}$/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for anomalous Hall effect in $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ alloy.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1180-1183
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantitative Model of the Surface Relief Formation in Cyclic Straining
Autorzy:
Polák, J.
Man, J.
Powiązania:
https://bibliotekanauki.pl/articles/1177391.pdf
Data publikacji:
2015-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.me
81.05.Bx
61.72.Ff
61.72.Hh
61.72.Lk
61.72.J-
Opis:
The cyclic strain localization in crystalline materials subjected to cyclic loading results in specific dislocation arrangement in persistent slip bands consisting of alternating dislocation rich and dislocation poor volumes. In the present model the interaction of mobile dislocations in persistent slip band leading to the formation of point defects during cyclic straining is considered. Point defects are steadily produced and simultaneously annihilated due to localized cyclic straining. The non-equilibrium point defects migrate to the matrix and result in transfer of matter between persistent slip band and the matrix and formation of the internal stresses both in the persistent slip band and in the matrix. Plastic relaxation of internal stresses leads to the formation of the characteristic surface relief in the form of persistent slip markings (extrusions and intrusions). Process of point defect migration is quantitatively described and the form of extrusion and parallel intrusions is predicted under some simplifying assumptions. The predictions of the model are discussed and predicted surface relief is compared with selected observations of surface relief produced by cyclic straining.
Źródło:
Acta Physica Polonica A; 2015, 128, 4; 675-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Grain-Subgrain Structure and Vacancy-Type Defects in Submicrocrystalline Nickel at Low Temperature Annealing
Autorzy:
Kuznetsov, P.
Lider, A.
Bordulev, Yu.
Laptev, R.
Rakhmatulina, T.
Korznikov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402134.pdf
Data publikacji:
2015-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Ef
61.72.J-
61.72.Lk
61.72.-y
81.40.Ef
78.70.Bj
Opis:
Scanning tunneling microscopy, positron annihilation and X-ray diffraction were applied for the study of annealing of submicrocrystalline nickel prepared by equal channel angular pressing. Several processes were revealed in the structure of submicrocrystalline nickel on different scale levels during annealing in the range Δ T=(20÷360)°C. A decrease of grain nonequiaxiality and further structure refinement were observed with a temperature increase in the range Δ T=(20÷180)°C. Subgrain growth with maximum =60 nm at 120°C occurred on the lower scale level within the same temperature range. Grain growth and microstress decrease in submicrocrystalline nickel observed at T>180°C indicate the beginning of recrystallization. The main positron trap centers were identified in submicrocrystalline nickel within different temperature ranges. In as-prepared samples positrons are trapped at dislocation-type defects and vacancy clusters that can include up to 5 vacancies. At the annealing temperature Δ T=(20÷180)°C positrons are trapped at low-angle boundaries enriched by impurities. Within the range Δ T=(180÷360)°C the dominant trap is dislocations.
Źródło:
Acta Physica Polonica A; 2015, 128, 4; 714-717
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies