- Tytuł:
- Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers
- Autorzy:
-
Gaubas, E.
Juršėnas, S.
Kazlauskas, K.
Miasojedovas, S.
Vaitkus, J.
Žukauskas, A. - Powiązania:
- https://bibliotekanauki.pl/articles/2041731.pdf
- Data publikacji:
- 2005-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.Hh
72.40.+w - Opis:
- The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-exponential stage with a stretched-exponent asymptotic decay ascribed to dislocations mediated multi-trapping were distinguished by correlated examination of time-resolved photoluminescence and photoconductivity transients.
- Źródło:
-
Acta Physica Polonica A; 2005, 107, 1; 215-219
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł