- Tytuł:
- Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions
- Autorzy:
-
Komarov, F.
Vlasukova, L.
Milchanin, O.
Greben, M.
Parkhomenko, I.
Mudryi, A.
Wendler, E.
Zukowski, P. - Powiązania:
- https://bibliotekanauki.pl/articles/1198877.pdf
- Data publikacji:
- 2014-06
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.80.-x
61.72.Ff
63.20.-e
78.66.-w - Opis:
- Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
- Źródło:
-
Acta Physica Polonica A; 2014, 125, 6; 1288-1291
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł