Wszystkie pola: Porowski, S. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Mechanisms of Yellow and Red Photoluminescence in Wurtzite and Cubic GaNDOI
Autorzy:: Godlewski, M.
Suski, T.
Grzegory, I.
Porowski, S.
Langer, R.
Barski, A.
Bergman, J. P.
Monemar, B.
Goldys, E. M.
Phillips, M. R.
Powiązania:: https://bibliotekanauki.pl/articles/1969079.pdf
Data publikacji:: 1998-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.16.Ch
61.72.Ff
71.55.Eq
Opis:: The origin of two "deep" photoluminescence (PL) emissions observed in wurtzite (yellow PL) and cubic (red PL) GaN is discussed. PL and time-resolved PL studies confirm donor-acceptor pair character of the yellow band in wurtzite GaN and point to participation of shallow donors in this emission. A similar PL mechanism is proposed for the red emission of cubic GaN. We further show a puzzling property of both yellow and red PLs. Both yellow and red emissions show spatial homogeneity and are only weakly dependent on surface morphology.
Źródło:: Acta Physica Polonica A; 1998, 94, 2; 326-330
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission
Autorzy:: Godlewski, M.
Ivanov, V. Yu.
Goldys, E. M.
Phillips, M.
Böttcher, T.
Figge, S.
Hommel, D.
Czernecki, R.
Prystawko, P.
Leszczynski, M.
Perlin, P.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2036870.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ff
61.72.Mm
68.37.Hk
78.60.Hk
Opis:: Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 689-694
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films
Autorzy:: Godlewski, M.
Goldys, E. M.
Phillips, M.
Böttcher, T.
Figge, S.
Hommel, D.
Czernecki, R.
Prystawko, P.
Leszczynski, M.
Perlin, P.
Wisniewski, P.
Suski, T.
Bockowski, M.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2035593.pdf
Data publikacji:: 2002
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ff
61.72.Mm
68.37.Hk
78.60.Hk
Opis:: Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.
Źródło:: Acta Physica Polonica A; 2002, 102, 4-5; 627-632
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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