Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "61.72.J-" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-6 z 6
    Tytuł:
    Study of Oxide-Dispersion-Strengthened Ferritic Steels after Ion Implantation
    Autorzy:
    Simeg Veternikova, J.
    Korhonen, E.
    Skarba, M.
    Degmova, J.
    Sabelova, V.
    Sojak, S.
    Slugen, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1336688.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.-y
    68.55.Ln
    61.72.J-
    Opis:
    This paper is focused on four different commercial oxide-dispersion-strengthened ferritic steels (MA 956, ODM 751, MA 957 and ODS Eurofer) with different chromium content and the change of their microstructure after helium ion implantation. The samples were implanted with kinetic energy of ions up to 500 keV and the implantation depth was up to 1.2 μm. The implantation was performed at Institute of Nuclear and Physical Engineering, Slovak University of Technology in Bratislava. The samples were observed prior and after the implantation by positron Doppler broadening spectroscopy with slow positron beam (energy up to 36 keV) which is one of the most suitable techniques due to its sensitivity to surface and subsurface layers up to 1.6 μm. The results showed visible change of defect presence in all samples and defect depth profiles are in a good accordance with SRIM software calculations displaying the Bragg peak. According to measured data, ODS Eurofer (9% Cr) seems to be the most radiation resistant from the group of all investigated steels and MA 956 (20% Cr) as the most radiation affected steel.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 741-743
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Grain-Subgrain Structure and Vacancy-Type Defects in Submicrocrystalline Nickel at Low Temperature Annealing
    Autorzy:
    Kuznetsov, P.
    Lider, A.
    Bordulev, Yu.
    Laptev, R.
    Rakhmatulina, T.
    Korznikov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402134.pdf
    Data publikacji:
    2015-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Ef
    61.72.J-
    61.72.Lk
    61.72.-y
    81.40.Ef
    78.70.Bj
    Opis:
    Scanning tunneling microscopy, positron annihilation and X-ray diffraction were applied for the study of annealing of submicrocrystalline nickel prepared by equal channel angular pressing. Several processes were revealed in the structure of submicrocrystalline nickel on different scale levels during annealing in the range Δ T=(20÷360)°C. A decrease of grain nonequiaxiality and further structure refinement were observed with a temperature increase in the range Δ T=(20÷180)°C. Subgrain growth with maximum =60 nm at 120°C occurred on the lower scale level within the same temperature range. Grain growth and microstress decrease in submicrocrystalline nickel observed at T>180°C indicate the beginning of recrystallization. The main positron trap centers were identified in submicrocrystalline nickel within different temperature ranges. In as-prepared samples positrons are trapped at dislocation-type defects and vacancy clusters that can include up to 5 vacancies. At the annealing temperature Δ T=(20÷180)°C positrons are trapped at low-angle boundaries enriched by impurities. Within the range Δ T=(180÷360)°C the dominant trap is dislocations.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 4; 714-717
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Transformations in Ion Bombarded InGaAsP
    Autorzy:
    Ratajczak, R.
    Turos, A.
    Stonert, A.
    Nowicki, L.
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504046.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.43.-j
    61.72.-y
    81.05.-t
    82.80.-d
    85.40.-e
    Opis:
    Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV $\text{}^4He$ ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × $10^{12}$ to 6 × $10^{14}$ at./$cm^2$. Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 136-139
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds
    Autorzy:
    Ratajczak, R.
    Werner, Z.
    Barlak, M.
    Pochrybniak, C.
    Stonert, A.
    Zhao, Q.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402209.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.43.-j
    61.72.-y
    81.05.-t
    82.80.-d
    85.40.-e
    Opis:
    The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 845-848
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of Materials by Raman Scattering
    Autorzy:
    Kozielski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047294.pdf
    Data publikacji:
    2007-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.-j
    62.20.-x
    61.72.-y
    36.20.Ng
    Opis:
    The paper reports on the use of phonon spectra obtained with the Raman spectroscopy for characterization of different materials. The Raman scattering spectra obtained for zinc selenide crystals, mixed crystals zinc selenide admixtured with magnesium or beryllium, oxide crystals including strontium lanthanum gallate, molecular crystals of triammonium hydrogen diseleniate and a homologous series of polyoxyethylene glycols are analysed.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 3; 343-360
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ Substrate Crystals by Raman Spectroscopy
    Autorzy:
    Drozdowski, M.
    Kozielski, M.
    Pajączkowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964243.pdf
    Data publikacji:
    1997-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.-y
    78.30.-j
    33.20.Fb
    63.20.-e
    Opis:
    In this paper the study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ single crystals using the Raman scattering method is presented. The obtained results are discussed in terms of nature of the crystallografic imperfections and point defects which might arise during the crystal growth process.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 1; 139-142
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies