Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "61.05.C-" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-3 z 3
    Tytuł:
    Microstructural Study of Fe-Si(Ge)-Nb-Cu-B Finemet Alloys
    Autorzy:
    Michalik, S.
    Bednarcik, J.
    Brzózka, K.
    Sovak, P.
    Górka, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1534048.pdf
    Data publikacji:
    2010-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.05.C-
    61.46.Hk
    Opis:
    Structural changes in Finemet based alloys invoked by germanium replacement for silicon were investigated using the X-ray diffraction, the X-ray absorption spectroscopy and the Mössbauer spectroscopy. Ge substitution preserves a nanostructural character of annealed samples at temperature 550°C; specifically the formation of a $DO_3$-type with about 19 at.% of (Si,Ge) was confirmed. The mean size of nanocrystals was estimated to be about 7 nm.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 5; 818-819
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Optical Characterizations of~Ge Nanostructures Fabricated by~RF Magnetron Sputtering and Rapid Thermal Processing
    Autorzy:
    Abd Rahim, A.
    Hashim, M.
    Rusop, M.
    Jumidali, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1490688.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.ag
    68.60.Dv
    61.46.Hk
    78.67.Bf
    61.05.C-
    Opis:
    In this work, we use a simple and cost effective technique of sputtering followed by the rapid thermal processing at 900C for 30 s to form Ge nanostructures on the Si(100) substrate. A layer of Ge (300 nm) and Si cap layer (100 nm) were deposited using RF magnetron sputtering. Two samples were prepared: Ge layer with Si capping (Si/Ge/Si) and Ge layer without Si capping (Ge/Si). Scanning electron microscopy shows that subsequent annealing in a rapid thermal processing gives uniformed Ge or SiGe islands with an estimated size of 100-500 nm. For the Ge/Si sample, under post growth annealing there had vanished the deposited Ge layer as confirmed by energy dispersive X-ray analysis. Atomic force microscopy shows that the surface roughness increases by a factor of 15.55% as the islands formed. The Raman spectrum shows that good crystalline structures of the Ge and SiGe peaks are produced. High resolution X-ray diffraction reveals cubic and tetragonal Ge phases with estimated average crystallite sizes of 42 nm and 20 nm, respectively. The results showed that it is possible to grow high quality Ge and SiGe nanostructures using a simple technique of sputtering for potential applications in photonics and high speed devices.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 16-19
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    On the Possibility to Control an Atom Motion in a FCC Iron Nanocluster
    Autorzy:
    Bondarenko, N.
    Nedolya, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030620.pdf
    Data publikacji:
    2018-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    02.70.Ns
    07.05.Pt
    36.40.-c
    61.46.Hk
    61.46.Bc
    Opis:
    The energy of the isolated iron nanocluster was calculated by molecular mechanics method using the Lennard-Jones potential depending on the position of impurity carbon atom and substitutional atoms of nickel. The cluster included a carbon atom, that drifted from an inside octahedral interstice to a direction ⟨022⟩ to the surface directly or to a tetrahedral interstice in ⟨1̅11⟩ direction and after that in ⟨222⟩ direction to the surface. In addition one of 14 iron atoms was replaced by a nickel atom (or pair atoms), the position of which was changing during simulation. It is shown that there were positions of a nickel atom that significantly affected nanoclusters energy. The calculation results indicated that position of a carbon atom in the octahedral interstice was more energetically favorable than tetrahedral interstice in the case of fcc nanocluster. On the other side, the potential barrier was smaller in the direction ⟨1̅11⟩ than in the direction ⟨022⟩. This indicates that there are two ways for carbon atom to drift to the surface of the nanocluster. The positions of nickel atoms were identified, which significantly affected the height of potential barriers of a tetrahedral and an octahedral interstice and determined the possible direction of carbon atoms drift. This allows manipulating atoms at the surface of nanocluster.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 2; 277-279
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies