- Tytuł:
- Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
- Autorzy:
-
Żymierska, D.
Godwod, K.
Adamczewska, J.
Auleytner, J.
Choiński, J.
Regiński, K. - Powiązania:
- https://bibliotekanauki.pl/articles/2030690.pdf
- Data publikacji:
- 2002-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.80.Jh
61.80.-x
61.10.-i
85.40.Ry - Opis:
- The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
- Źródło:
-
Acta Physica Polonica A; 2002, 101, 5; 743-750
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł