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Wyszukujesz frazę "Pełka, J." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
X-Ray Standing Wave Technique as a Tool in the Study of the Imperfect Crystals
Autorzy:
Pełka, J.
Auleytner, J.
Powiązania:
https://bibliotekanauki.pl/articles/1920851.pdf
Data publikacji:
1992-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
The application of the X-ray standing wave (XSW) technique in the case of imperfect crystals meets serious theoretical and interpretational problems. However, well-known advantages of the XSW technique make it especially interesting to the study of the ordering of impurities and of various processes leading to changes in this ordering in various likes of imperfect crystals. In this work we try to answer the question how imperfection of a crystal may influence the changes in fluorescence yield during the XSW measurement. Two likes of imperfect crystals are studied: Si(111) implanted with high energetic Bi$\text{}^{+}$ ions, and Zn$\text{}_{1-x}$Co$\text{}_{x}$Se single crystal with natural (111) face. The discussion of obtained results shows that general features of the X-ray standing wave field are conserved despite the considerable imperfections of the crystals. The results seem to support the applicability of the XSW technique to the study of imperfect materials, although some further theoretical effort would be required.
Źródło:
Acta Physica Polonica A; 1992, 82, 1; 163-171
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray and Electron-Optical Characterization of ZnTe/CdTe and ZnTe/GaAs Epitaxial Layers Obtained by the MBE Method
Autorzy:
Auleytner, J.
Dziuba, Z.
Górecka, J.
Pełka, J.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1931657.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
61.10.-i
68.55.-a
Opis:
X-ray diffraction topography (Bragg diffraction) and X-ray rocking curve measurements were used to study the perfection and structural properties of ZnTe epitaxial layers on the CdTe and GaAs substrates. ZnTe epitaxial layers on CdTe were grown by MBE method by using a machine made in the Institute of Physics of the Polish Academy of Sciences. The ZnTe layers on GaAs were produced on the other, factory-made MBE system. The comparison between the X-ray topographical images of the substrate and epitaxial layer shows that imperfections on the substrate surface cause imperfections in the epitaxial layer. The results of double-crystal diffractometry measurements show that the perfection of the layer on the GaAs substrate is higher than that on the CdTe. The presence of microtwining in the ZnTe layer on the CdTe substrate was confirmed by RHEED measurements. The X-ray standing wave fluorescent spectra were also measured for the samples.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 567-574
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray and Electron-Optical Characterization of ZnSe(Co) Crystal with Natural Face
Autorzy:
Auleytner, J.
Domagała, J.
Gołacki, Z.
Pawłowska, M.
Pełka, J.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1929340.pdf
Data publikacji:
1993-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.14.Hg
61.16.Bg
Opis:
Using complementary X-ray and electron-optical methods, a ZnSe(Co) crystal with natural face was investigated. X-ray diffraction methods such as double-crystal X-ray reflection topography, double-crystal diffractometry for rocking curve measurements, precise lattice constant measurements by the Bond technique were used for crystal structure characterization and X-ray fluorescence method for studies of chemical composition along the crystal. The scanning electron microscopic image of the crystal surface and reflection diffraction of the high-energy electrons enriched the crystal structure characterization. It was shown that X-ray characterization and reflection high-energy electron diffraction can be regarded as very important complementary tools for non-destructive investigation of the ZnSe(Co) crystal surface layers.
Źródło:
Acta Physica Polonica A; 1993, 83, 6; 759-768
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods
Autorzy:
Klinger, D.
Lefeld-Sosnowska, M.
Pełka, J. B.
Paszkowicz, W.
Gierłowski, P.
Pankowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/2030709.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.10.Kw
61.72.Tt
68.35.Fx
81.40.Ef
81.65.Mq
Opis:
This paper reports on the study of structural modifications induced by the implantation process and by the subsequent thermal annealing in near-surface layers of Si single crystals implanted with Si$\text{}^{2+}$ ions of energy 140 keV and doses from 1×10$\text{}^{15}$ to 1× 10$\text{}^{16}$ ions/cm$\text{}^{2}$. The grazing incidence X-ray diffraction and X-ray reflectivity measurements were applied to determine the thickness and structural composition of the damaged layers. The fitted electron density profiles indicated an existence of an interfacial layer with density higher than the density of Si matrix or near-surface oxide layer. Formation of polycrystalline phases of silicon and silicon oxides is discussed in dependence on the conditions of annealing treatment and implantation dose.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 795-801
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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