- Tytuł:
- Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications
- Autorzy:
-
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Figge, S.
Hommel, D.
Guziewicz, E.
Godlewski, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1399138.pdf
- Data publikacji:
- 2013-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
85.30.Kk
61.05.cp
81.05.Dz - Opis:
- An important feature of zinc oxide and gallium nitride materials are their similar physical properties. This allows to use them as a p-n junction materials for applications in optoelectronics. In earlier work we presented use of ZnO as a transparent contact to GaN, which may improve external efficiency of LED devices. In this work we discuss properties of a n-ZnO/p-GaN heterostructure and discuss its optimization. The heterostructure is investigated by us for possible applications, e.g. in a new generation of UV LEDs or UV light detectors.
- Źródło:
-
Acta Physica Polonica A; 2013, 124, 5; 869-872
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł