Wszystkie pola: femtosecond laser - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Adaptive Optical Delay Lines for Femtosecond Laser Pulses Shaping
Autorzy:: Molchanov, V.
Chizhikov, S.
Makarov, O.
Solodovnikov, N.
Ginzburg, V.
Katin, E.
Khazanov, E.
Lozhkarev, V.
Yakovlev, I.
Epatko, I.
Serov, R.
Powiązania:: https://bibliotekanauki.pl/articles/1807737.pdf
Data publikacji:: 2009-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
42.79.Jq
43.38.Zp
Opis:: The paper is devoted to investigation of adaptive optical delay lines, intended for femtosecond pulse shaping. Experiments were performed in the sub PW laser system, based on optical parametrical chirped pulse amplification. The experimental device has revealed high spectral resolution (0.6 nm at 1250 nm) high efficiency, (70% over a 120 nm spectral width at 1250 nm) and flexibility of seed pulse amplitude control. Proper shaping of the transmission function of adaptive optical delay line allows to double the femtosecond pulse spectrum band width.
Źródło:: Acta Physica Polonica A; 2009, 116, 3; 355-358
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Terahertz Emission from Narrow Gap Semiconductors Photoexcited by Femtosecond Laser Pulses
Autorzy:: Adomavičius, R.
Urbanowicz, A.
Molis, G.
Krotkus, A.
Powiązania:: https://bibliotekanauki.pl/articles/2041649.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
07.57.Hm
78.47.+p
72.30.+q
Opis:: Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping levels of approximately 10$\text{}^{16}$-10$\text{}^{17}$ cm$\text{}^{-3}$. This increase was explained by a large surface depletion layer and an electric-field-induced optical rectification effect in the layer. Terahertz fields radiated by the samples of all three investigated Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te layers was of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, which evidences that linear current surge effect is dominating over nonlinear optical rectification. Azimuthal angle and magnetic fields emission witness that it is caused by linear photo-Dember type processes.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 132-136
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Terahertz Generation from Femtosecond-Laser-Excited GaAs Surface Due to Electric-Field-Induced, Optical Rectification
Autorzy:: Malevich, V.
Ziaziulia, P.
Manak, I.
Powiązania:: https://bibliotekanauki.pl/articles/1813211.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
42.65.Ky
73.30.+y
Opis:: The dynamics of the depletion field screening induced by photoexcited carriers and THz generation caused by the electric-field-induced optical rectification are simulated for GaAs surface excited by femtosecond laser radiation on the basis of an ensemble Monte Carlo method. The results show that the photocarrier-induced screening occurs on a subpicosecond time scale and THz pulse essentially changes its wave form depending on excitation pulse duration and fluence. The possibility to use the depletion electric field induced THz generation for study of subpicosecond electric field screening dynamics is discussed.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 887-890
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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