- Tytuł:
- Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions
- Autorzy:
-
Komarov, A.
Velichko, O.
Zayats, G.
Komarov, F.
Miskiewicz, S.
Mironov, A.
Makarevich, Yu. - Powiązania:
- https://bibliotekanauki.pl/articles/1400426.pdf
- Data publikacji:
- 2013-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
66.30.J-
07.05.Tp
07.05.Bx - Opis:
- Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and influence of non-uniform defects distribution as well as electric field and elastic stress on the migration of atoms. The redistribution of point defects as well as the diffusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well.
- Źródło:
-
Acta Physica Polonica A; 2013, 123, 5; 804-808
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł