Temat: 72.70.+m - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Frequency Influence on the Hot-Electron Noise Reduction in GaAs Operating under Periodic Signals
Autorzy:: Persano Adorno, D.
Capizzo, M.
Pizzolato, N.
Powiązania:: https://bibliotekanauki.pl/articles/1813386.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.70.+m
05.40.Ca
72.30.+q
Opis:: A Monte Carlo study of the role of the frequency on the hot-electron intrinsic noise reduction in an n-type GaAs bulk driven by two mixed cyclostationary electric fields is presented. Previous numerical results showed the possibility to reduce the diffusion noise under specific wave-mixing conditions. In this work the variations of the noise properties are investigated by computing and integrating the spectral density of the velocity fluctuations. We found that the effect of reduction of the noise level due to the addition of a second field at twice frequency is almost independent of the frequency.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 979-983
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: External Noise Effects on the Electron Velocity Fluctuations in Semiconductors
Autorzy:: Persano Adorno, D.
Pizzolato, N.
Spagnolo, B.
Powiązania:: https://bibliotekanauki.pl/articles/1813387.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.70.+m
05.40.Ca
05.40.-a
Opis:: We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover, this random field can cause a suppression of the total noise power.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 985-988
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Microplasma Noise Stimulated by Microwave Electric Field
Autorzy:: Namajūnas, A.
Tamaševičius, A.
Mykolaitis, G.
Bumelienė, S.
Požela, J.
Powiązania:: https://bibliotekanauki.pl/articles/2041773.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 05.40.Ca
52.25.Gj
72.70.+m
85.30.-z
Opis:: Si and GaAs avalanche diodes containing microplasmas are investigated. Microwave field applied to the diode in addition to reverse dc bias results in considerable spread of noise spectrum and in the increase of noise power. The microplasma noise spectra cover very high (30 to 300 MHz) and ultrahigh (300 to 1000 MHz) frequency bands, while the effective noise temperature is about 10$\text{}^{8}$ K.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 369-372
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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