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Wyświetlanie 1-2 z 2
Tytuł:
Modification of Optical, Electronic and Microstructural Properties of PET by 150 keV Cs+ Irradiation
Autorzy:
Musiatowicz, Michał
Turek, Marcin
Droździel, Andrzej
Pyszniak, Krzysztof
Grudziński, Wojciech
Powiązania:
https://bibliotekanauki.pl/articles/2206284.pdf
Data publikacji:
2022
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
polymer modification
PET
ion implantation
FTIR spectroscopy
Raman spectroscopy
conducting layer
Opis:
Thick (0.125 mm) sheet samples of PET were irradiated with 150 keV Cs+ ion beam with fluences in the range from 10^13 cm^-2 up to 10^16 cm^-2). Raman and UV-VIS spectroscopy measurements shown destruction of numerous bonds within the polymer – this effect intensifies with fluence. Raman spectroscopy shows the presence of amorphous graphitelike structures as the broad G band appears in the collected spectrum. The analysis of absorbance spectra also confirms formation of numerous carbon clusters leading to a formation of vast conducting structures in the modified layer of the polymer. One can observe the decrease of optical bandgap from 3.85 eV (typical for pristine PET) to 1.05 eV for the sample implanted with the highest fluence, the effect is weaker than for lighter alkali metal ions. The estimated average number of C atom in a clusters reaches in such case values close to 1100. The changes in the polymer structure lead to intense reduction of electrical sheet resistivity of the modified samples by ~ 8 orders of magnitude in the case of severely modified sample. The dependence of resistivity on temperature has also been measured. The plots of ln(σ) vs 1/T show that band conductivity or nearest neighbor hopping between conducting structures prevail in the considered case
Źródło:
Advances in Science and Technology. Research Journal; 2022, 16, 5; 11-19
2299-8624
Pojawia się w:
Advances in Science and Technology. Research Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystal Lattice Damage and Recovery of Rare-Earth implanted Wide Bandgap Oxides
Autorzy:
Sarwar, Mahwish
Ratajczak, Renata
Ivanov, Vitalii
Mishra, Sushma
Turek, Marcin
Wierzbicka, Aleksandra
Woźniak, Wojciech
Guziewicz, Elżbieta
Powiązania:
https://bibliotekanauki.pl/articles/2204945.pdf
Data publikacji:
2022
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
wide bandgap oxides
zinc oxide
gallium oxide
rare earth
ion implantation
Rutherford backscattering spectrometry
low temperature photoluminescence
Opis:
Rare earth (RE) elements are important for the optical tuning of wide bandgap oxides (WBO) such as β-Ga2O3 or ZnO, because β-Ga2O3:RE or ZnO:RE show narrow emission lines in the visible, ultra-violet and infra-red region. Ion implantation is an attractive method to introduce dopant into the crystal lattice with an extraordinary control of the dopant ion composition and location, but it creates the lattice damage, which may render the dopant optically inactive. In this research work, we investigate the post-implantation crystal lattice damage of two matrices of wide-bandgap oxides, β-Ga2O3 and ZnO, implanted with rare-earth (RE) to a fluence of 5 x 10^14, 1 x 10^15 and 3 x 10^15 atoms/cm^2, and post-growth annealed in Ar and O2 atmosphere, respectively. The effect of implantation and annealing on both crystal lattices was investigated by channeling Rutherford backscattering spectrometry (RBS/C) technique. The level of crystal lattice damage caused by implantation with the same RE fluences in the case of β-Ga2O3 seems to be higher than in the case of ZnO. Low temperature photoluminescence was used to investigate the optical activation of RE in both matrices after performed annealing.
Źródło:
Advances in Science and Technology. Research Journal; 2022, 16, 5; 147--154
2299-8624
Pojawia się w:
Advances in Science and Technology. Research Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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