Wszystkie pola: incidence angle - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Investigation on silicon solar cell capacitance and its dependence on both temperature and incidence angle
Autorzy:: Sané, M
Barro, F I
Powiązania:: https://bibliotekanauki.pl/articles/102664.pdf
Data publikacji:: 2014
Wydawca:: Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:: vertical junction
capacitance
temperature
incidence angle
Opis:: The aim of this work is to investigate a theoretical study of a vertical junction silicon solar cell capacitance under monochromatic illumination. By solving the continuity equation and using a one dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both temperature and incidence angle on the solar cell capacitance.
Źródło:: Advances in Science and Technology. Research Journal; 2014, 8, 24; 9-12
2299-8624
Pojawia się w:: Advances in Science and Technology. Research Journal
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Effect of incidence angle varying from 0 rad to Π/2 rad and intensity of radio waves on the performance of a silicon solar cell
Autorzy:: Zerbo, I.
Zoungrana, M.
Saria, M.
Ouedraogo, A.
Bathiebo, D. J.
Powiązania:: https://bibliotekanauki.pl/articles/102585.pdf
Data publikacji:: 2017
Wydawca:: Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:: conversion efficiency
incidence angle
radio waves
shunt resistance
solar
cell
Opis:: In this work, a one dimensional approach is presented for modelling the effect of the incidence angle, varying from 0 rad to π/2 rad, and the intensity of radio waves on the performance of a polycrystalline silicon solar cell under constant multispectral illumination. By solving the continuity equation in steady state, we derived the expression of the density of excess minority carriers, the photocurrent density, the photovoltage, the electric power and their dependence on the incidence angle and the intensity of the electromagnetic field is analyzed. Using the electric power curves versus junction dynamic velocity we determined the electric power lost at the junction, the maximum electric power and we calculated the conversion efficiency for various incidence angle and intensity of the electromagnetic field. The leakage photocurrent density, deduced from the photocurrent density curves versus junction dynamic velocity, and the electric power lost at the junction allowed us to calculate the shunt resistance of the solar cell according to the incidence angle and the intensity of the electromagnetic field. The numerical data show the negative effect of radios waves on the performance of a silicon solar cell.
Źródło:: Advances in Science and Technology. Research Journal; 2017, 11, 4; 68-75
2299-8624
Pojawia się w:: Advances in Science and Technology. Research Journal
Dostawca treści:: Biblioteka Nauki

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