Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "nanostructures" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-2 z 2
    Tytuł:
    Structural, morphological and photoluminescent properties of Nd-coated silicon nanostructures
    Autorzy:
    Mefoued, Amine
    Mahmoudi, Bedra
    Benrekaa, Nasser
    Tiour, Faiza
    Menari, Hamid
    Naitbouda, Abdelyamine
    Manseri, Amar
    Brik, Afaf
    Mezghiche, Salah
    Debbab, Moustafa
    Powiązania:
    https://bibliotekanauki.pl/articles/2204154.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    silicon nanostructures
    silicon nitride
    neodymium
    SEM/EDS
    SIMS
    Raman spectroscopy
    photoluminescence
    Opis:
    The structural, morphological and photoluminescent properties of thermally evaporated neodymium oxide (Nd₂O₃) thin films deposited onto nanostructured silicon (Si-ns) are reported. Si-ns embedded in silicon nitride (SiN) thin films are prepared by plasma-enhanced chemical vapour deposition (PECVD). SiN and Nd₂O₃ thin films uniformity and Si-ns formation are confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The presence of neodymium (Nd), silicon (Si), oxygen (O), and phosphorus (P) is investigated by energy-dispersive spectroscopy (EDS) and secondary ion mass spectrometry (SIMS). Post-annealing SIMS profile indicates an improvement of the homogeneity of activated P distribution in Si bulk. The X-ray diffraction (XRD) combined with Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) have been employed to determine amorphous silicon (a-Si), crystalline silicon (c-Si), Nd₂O₃ and SiN phases present in the Nd₂O₃-SiN bilayers with their corresponding chemical bonds. After annealing, a Raman shift toward lower wavenumbers is recorded for the Si peak. XPS data reveal the formation of Nd₂O₃ thin films with Nd-O bonding incorporating trivalent Nd ions (Nd3+). Strong room-temperature photoluminescence is recorded in the visible light range from the Si-ns. Nd-related photoluminescent emission in the near infrared (NIR) range is observed at wavelengths of 1025-1031 nm and 1083 nm, and hence is expected to improve light harvesting of Si-based photovoltaic devices.
    Źródło:
    Opto-Electronics Review; 2023, 31, 1; art. no. e145096
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of photoanode structure and sensitization conditions on the photovoltaic response of dye-sensitized solar cells
    Autorzy:
    Gnida, Paweł
    Słodek, Aneta
    Schab-Balcerzak, Ewa
    Powiązania:
    https://bibliotekanauki.pl/articles/2083481.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    dye-sensitized solar cells
    N719
    phenothiazine derivatives
    TiO2 nanostructures
    co-sensitization
    co-adsorbents
    Opis:
    This work summarises investigations focused on the photoanode impact on the photovoltaic response of dye-sensitized solar cells. This is a comparison of the results obtained by the authors’ research team with literature data. The studies concern the effect of the chemical structure of the applied dye, TiO₂ nanostructure, co-adsorbents addition, and experimental conditions of the anode preparation. The oxide substrates were examined using a scanning electron microscope to determine the thickness and structure of the material. The TiO₂ substrates with anchored dye molecules were also tested for absorption properties in the UV-Vis light range, largely translating into current density values. Photovoltaic parameters of the fabricated devices with sandwich structure were obtained from current-voltage measurements. During tests conducted with the N719 dye, it was found that devices containing an 8.4 μm thick oxide semiconductor layer had the highest efficiency (5.99%). At the same time, studies were carried out to determine the effect of the solvent and it was found that the best results were obtained using an ACN : tert-butanol mixture (5.46%). Next, phenothiazine derivatives (PTZ-1–PTZ-6) were used to prepare the devices; among the prepared solar cells, the devices containing PTZ-2 and PTZ-3 had the highest performance (6.21 and 6.22%, respectively). Two compounds designated as Th-1 and M-1 were used to prepare devices containing a dye mixture with N719.
    Źródło:
    Opto-Electronics Review; 2022, 30, 1; art. no. e140739
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-2 z 2

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies