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    Wyświetlanie 1-9 z 9
    Tytuł:
    Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors
    Autorzy:
    Martyniuk, Piotr
    Benyahia, Djalal
    Powiązania:
    https://bibliotekanauki.pl/articles/2204216.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    molecular beam epitaxy
    superlattice
    X-ray diffraction
    III-V semiconductor
    Opis:
    Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 μm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144557
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    2D material infrared and terahertz detectors : status and outlook
    Autorzy:
    Rogalski, Antoni
    Kopytko, Małgorzata
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818243.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    terahertz detectors
    infrared detectors
    graphene
    BLIP performance
    HgCdTe photodiodes
    Opis:
    Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
    Źródło:
    Opto-Electronics Review; 2020, 28, 3; 107--154
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    2D material infrared and terahertz detectors : status and outlook
    Autorzy:
    Rogalski, Antoni
    Kopytko, Małgorzata
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818245.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    terahertz detectors
    infrared detectors
    graphene
    BLIP performance
    HgCdTe photodiodes
    Opis:
    Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
    Źródło:
    Opto-Electronics Review; 2020, 28, 3; 107--154
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors
    Autorzy:
    Rogalski, Antoni
    Kopytko, Małgorzata
    Martyniuk, Piotr
    Hu, Weida
    Powiązania:
    https://bibliotekanauki.pl/articles/1818250.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    HOT infrared detectors
    HgCdTe photodiodes
    p-i-n depleted photodiodes
    BLIP performance
    Opis:
    The semiempirical rule, “Rule 07” specified in 2007 for P-on-n HgCdTe photodiodes has become widely popular within infrared community as a reference for other technologies, notably for III-V barrier photodetectors and type-II superlattice photodiodes. However, in the last decade in several papers it has been shown that the measured dark current density of HgCdTe photodiodes is considerably lower than predicted by benchmark Rule 07. Our theoretical estimates carried out in this paper support experimental data. Graphene and other 2D materials, due to their extraordinary and unusual electronic and optical properties, are promising candidates for high-operating temperature infrared photodetectors. In the paper their room-temperature performance is compared with that estimated for depleted P i-N HgCdTe photodiodes. Two important conclusions result from our considerations: the first one, the performance of 2D materials is lower in comparison with traditional detectors existing on global market (InGaAs, HgCdTe and type- II superlattices), and the second one, the presented estimates provide further encouragement for achieving low-cost and high performance HgCdTe focal plane arrays operating in high-operating temperature conditions.
    Źródło:
    Opto-Electronics Review; 2020, 28, 2; 82--92
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Theoretical study of back-to-back avalanche photodiodes for dual-band infrared applications
    Autorzy:
    Manyk, Tetiana
    Majkowycz, Kinga
    Rutkowski, Jarosław
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/2204171.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    IR detectors
    HgCdTe avalanche photodiodes
    excess noise
    gain
    dual-band detectors
    Opis:
    The dual-band avalanche photodiode (APD) detector based on a HgCdTe material system was designed and analysed in detail numerically. A theoretical analysis of the two-colour APD intended for the mid wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges was conducted. The main purpose of the work was to indicate an approach to select APD structure parameters to achieve the best performance at high operating temperatures (HOT). The numerical simulations were performed by Crosslight numerical APSYS platform which is designed to simulate semiconductor optoelectronic devices. The current-voltage characteristics, current gain, and excess noise analysis at temperature T = 230 K vs. applied voltage for MWIR (U = 15 V) and LWIR (U = –6 V) ranges were performed. The influence of low and high doping in both active layers and barrier on the current gain and excess noise is shown. It was presented that an increase of the APD active layer doping leads to an increase in the photocurrent gain in the LWIR detector and a decrease in the MWIR device. The dark current and photocurrent gains were compared. Photocurrent gain is higher in both spectral ranges.
    Źródło:
    Opto-Electronics Review; 2023, 31, 2; art. no. e145093
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics
    Autorzy:
    Manyk, Tetiana
    Rutkowski, Jarosław
    Madejczyk, Paweł
    Gawron, Waldemar
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/2074201.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    HgCdTe
    MWIR detectors
    dark current
    I-V characteristics
    recombination
    Opis:
    A theoretical analysis of the mid-wavelength infrared range detectors based on the HgCdTe materials for high operating temperatures is presented. Numerical calculations were compared with the experimental data for HgCdTe heterostructures grown by the MOCVD on the GaAs substrates. Theoretical modelling was performed by the commercial platform SimuAPSYS (Crosslight). SimuAPSYS fully supports numerical simulations and helps understand the mechanisms occurring in the detector structures. Theoretical estimates were compared with the dark current density experimental data at the selected characteristic temperatures: 230 K and 300 K. The proper agreement between theoretical and experimental data was reached by changing Auger-1 and Auger-7 recombination rates and Shockley-Read-Hall carrier lifetime. The level of the match was confirmed by a theoretical evaluation of the current responsivity and zero-bias dynamic resistance area product (R0A) of the tested detectors.
    Źródło:
    Opto-Electronics Review; 2022, 30, 2; art. no. e141596
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MCT heterostructures for higher operating temperature infrared detectors designed in Poland
    Autorzy:
    Madejczyk, Paweł
    Gawron, Waldemar
    Sobieski, Jan
    Martyniuk, Piotr
    Rutkowski, Jarosław
    Powiązania:
    https://bibliotekanauki.pl/articles/2204223.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    MCT
    HgCdTe
    metal organic chemical vapour deposition
    infrared detectors
    higher operating temperature
    Opis:
    This paper presents examples of infrared detectors with mercury cadmium telluride elaborated at the Institute of Applied Physics, Military University of Technology and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 μm to 14 μm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144551
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
    Autorzy:
    Kopytko, Małgorzata
    Gomółka, Emilia
    Manyk, Tetiana
    Michalczewski, Krystian
    Kubiszyn, Łukasz
    Rutkowski, Jaroslaw
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818207.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    T2SLs
    superlattice
    III-V materials
    I-V characteristics
    Opis:
    Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
    Źródło:
    Opto-Electronics Review; 2021, 29, 1; 1--4
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
    Autorzy:
    Kopytko, Małgorzata
    Gomółka, Emilia
    Manyk, Tetiana
    Michalczewski, Krystian
    Kubiszyn, Łukasz
    Rutkowski, Jaroslaw
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818204.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    T2SLs
    superlattice
    III-V materials
    I-V characteristics
    Opis:
    Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
    Źródło:
    Opto-Electronics Review; 2021, 29, 1; 1--4
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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