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Tytuł:
Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays
Autorzy:
James, Jonathan Ch.
Haran, Terence L.
Lane, Sarah E.
Powiązania:
https://bibliotekanauki.pl/articles/2204205.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared focal plane arrays
III-V semiconductor infrared detector technologies
infrared sensor performance modelling
infrared sensor design
mid-wave and longwave infrared sensors
Opis:
Infrared detector technologies engineered from III-V semiconductors such as strained-layer superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors provide additional flexibility to engineer bandgap or spectral response cut-offs compared to the historical high-performance detector technology of mercury/cadmium/telluride. The choice of detector cut-off depends upon the sensing application for which the system engineer is attempting to maximize performance within an expected ensemble of operational scenarios that define objects or targets to be detected against specific environmental backgrounds and atmospheric conditions. Sensor performance is typically characterised via one or more metrics that can be modelled or measured experimentally. In this paper, the authors will explore the impact of detector cut-off wavelength with respect to different performance metrics such as noise equivalent temperature difference and expected target detection or identification ranges using analytical models developed for several representative sensing applications encompassing a variety of terrestrial atmospheric conditions in the mid-wave and long-wave infrared wavelength bands. The authors will also report on their review of recently published literature concerning the relationships between cut-off wavelength and the other detector performance characteristics such as quantum efficiency or dark current for a variety of detector technologies.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144570
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Grating-free high-x InP/InxGa1-xAs mid-wavelength infrared QWIP focal plane array
Autorzy:
Besikci, Cengiz
Balcı, Saadettin V.
Tanış, Onur
Güngör, Oğuz O.
Arpaguş, Esra S.
Powiązania:
https://bibliotekanauki.pl/articles/2204209.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared imaging
quantum well
infrared photodetector
Opis:
The authors report the characteristics of a diffraction-grating-free mid-wavelength infrared InP/In₀.₈₅Ga₀.₁₅As quantum well infrared photodetector focal plane array with a 640 × 512 format and a 15 µm pitch. Combination of a normal incident radiation sensing ability of the high-x InxGa1-xAs quantum wells with a large gain property of the InP barriers led to a diffraction-grating-free quantum well infrared photodetector focal plane array with characteristics displaying great promise to keep the status of the quantum well infrared photodetector as a robust member of the new generation thermal imaging sensor family. The focal plane array exhibited excellent uniformity with noise equivalent temperature difference nonuniformity as low as 10% and a mean noise equivalent temperature difference below 20 mK with f/2 optics at 78 K in the absence of grating. Elimination of the diffraction-grating and large enough conversion efficiency (as high as ~70% at a -3.5 V bias voltage) abolish the bottlenecks of the quantum well infrared photodetector technology for the new generation very small-pitch focal plane arrays.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144563
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Van der Waals materials for HOT infrared detectors : a review
Autorzy:
Rogalski, Antoni
Powiązania:
https://bibliotekanauki.pl/articles/2063905.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
transition metal dichalcogenides photodetectors
HgCdTe photodiodes
high operating temperature infrared detectors
Opis:
In the last decade several papers have announced usefulness of two-dimensional materials for high operating temperature photodetectors covering long wavelength infrared spectral region. Transition metal dichalcogenide photodetectors, such as PdSe₂/MoS₂ and WS₂/HfS₂ heterojunctions, have been shown to achieve record detectivities at room temperature (higher than HgCdTe photodiodes). Under these circumstances, it is reasonable to consider the advantages and disadvantages of two-dimensional materials for infrared detection. This review attempts to answer the question thus posed.
Źródło:
Opto-Electronics Review; 2022, 30, 1; art. no. e140551
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InAs/InAsSb superlattice infrared detectors
Autorzy:
Ting, David Z.
Soibel, Alexander
Khoshakhlagh, Arezou
Keo, Sam A.
Rafol, Sir B.
Fisher, Anita M.
Hill, Cory J.
Pepper, Brian J.
Maruyama, Yuki
Gunapala, Sarath D.
Powiązania:
https://bibliotekanauki.pl/articles/2204211.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
type-II superlattice
InAs/InAsSb
complementary barrier infrared detectors
strained layer superlattice
Opis:
Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type- II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more indepth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144565
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength
Autorzy:
Delmas, Marie
Ramos, David
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Rihtnesberg, David
Almqvist, Susanne
Becanovic, Smilja
Costard, Eric
Höglund, Linda
Powiązania:
https://bibliotekanauki.pl/articles/2204225.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detectors
short-wavelength infrared
InAs/GaSb superlattice
type-II superlattice
Opis:
This work investigates the potential of InAs/GaSb superlattice detectors for the shortwavelength infrared spectral band. A barrier detector structure was grown by molecular beam epitaxy and devices were fabricated using standard photolithography techniques. Optical and electrical characterisations were carried out and the current limitations were identified. The authors found that the short diffusion length of ~1.8 µm is currently limiting the quantum efficiency (double-pass, no anti-reflection coating) to 43% at 2.8 µm and 200 K. The dark current density is limited by the surface leakage current which shows generation-recombination and diffusion characters below and above 195 K, respectively. By fitting the size dependence of the dark current, the bulk values have been estimated to be 6.57·10ˉ⁶ A/cm² at 200 K and 2.31·10ˉ⁶ A/cm² at 250 K, which is only a factor of 4 and 2, respectively, above the Rule07.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144555
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
2D material infrared and terahertz detectors : status and outlook
Autorzy:
Rogalski, Antoni
Kopytko, Małgorzata
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818243.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
terahertz detectors
infrared detectors
graphene
BLIP performance
HgCdTe photodiodes
Opis:
Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 107--154
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
2D material infrared and terahertz detectors : status and outlook
Autorzy:
Rogalski, Antoni
Kopytko, Małgorzata
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818245.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
terahertz detectors
infrared detectors
graphene
BLIP performance
HgCdTe photodiodes
Opis:
Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 107--154
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MCT heterostructures for higher operating temperature infrared detectors designed in Poland
Autorzy:
Madejczyk, Paweł
Gawron, Waldemar
Sobieski, Jan
Martyniuk, Piotr
Rutkowski, Jarosław
Powiązania:
https://bibliotekanauki.pl/articles/2204223.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
MCT
HgCdTe
metal organic chemical vapour deposition
infrared detectors
higher operating temperature
Opis:
This paper presents examples of infrared detectors with mercury cadmium telluride elaborated at the Institute of Applied Physics, Military University of Technology and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 μm to 14 μm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144551
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Corrigendum to “Van der Waals materials for HOT infrared detectors : a review” [Opto-Electronics Review 30 (2022) e140551]
Autorzy:
Rogalski, Antoni
Powiązania:
https://bibliotekanauki.pl/articles/2063909.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
transition metal dichalcogenides photodetectors
HgCdTe photodiodes
high operating temperature infrared detectors
Źródło:
Opto-Electronics Review; 2022, 30, 2; art. no. e141441
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors
Autorzy:
Rogalski, Antoni
Kopytko, Małgorzata
Martyniuk, Piotr
Hu, Weida
Powiązania:
https://bibliotekanauki.pl/articles/1818250.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
HOT infrared detectors
HgCdTe photodiodes
p-i-n depleted photodiodes
BLIP performance
Opis:
The semiempirical rule, “Rule 07” specified in 2007 for P-on-n HgCdTe photodiodes has become widely popular within infrared community as a reference for other technologies, notably for III-V barrier photodetectors and type-II superlattice photodiodes. However, in the last decade in several papers it has been shown that the measured dark current density of HgCdTe photodiodes is considerably lower than predicted by benchmark Rule 07. Our theoretical estimates carried out in this paper support experimental data. Graphene and other 2D materials, due to their extraordinary and unusual electronic and optical properties, are promising candidates for high-operating temperature infrared photodetectors. In the paper their room-temperature performance is compared with that estimated for depleted P i-N HgCdTe photodiodes. Two important conclusions result from our considerations: the first one, the performance of 2D materials is lower in comparison with traditional detectors existing on global market (InGaAs, HgCdTe and type- II superlattices), and the second one, the presented estimates provide further encouragement for achieving low-cost and high performance HgCdTe focal plane arrays operating in high-operating temperature conditions.
Źródło:
Opto-Electronics Review; 2020, 28, 2; 82--92
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors
Autorzy:
Ramos, David
Delmas, Marie
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Almqvist, Susanne
Becanovic, Smilja
Hellström, Per-Erik
Costard, Eric
Höglund, Linda
Powiązania:
https://bibliotekanauki.pl/articles/2204214.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
surface leakage
type-II superlattice
megapixel
n-on-p
Opis:
This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallowetch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 μm with n-on-p polarity. A lateral diffusion length of 16 μm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 μm pitch, and a potential operating temperature up to 100 K is demonstrated.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144556
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors
Autorzy:
Morath, Christian P.
Casias, Lilian K.
Umana-Membreno, Gilberto A.
Webster, Preston T.
Grant, Perry C.
Maestas, Diana
Cowan, Vincent M.
Faraone, Lorenzo
Krishna, Sanjay
Balakrishnan, Ganesh
Powiązania:
https://bibliotekanauki.pl/articles/2204224.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
III-V infrared detectors
Bulk InAsSb
InAsSb/InAs superlattice
mobility
carrier concentration
Opis:
The sensitivity of III-V-based infrared detectors is critically dependent upon the carrier concentration and mobility of the absorber layer, and thus, accurate knowledge of each is required to design structures for maximum detector performance. Here, measurements of the bulk in-plane resistivity, in-plane mobility, and carrier concentration as a function of temperature are reported for non-intentionally doped and Si-doped mid-wave infrared InAs₀.₉₁Sb₀.₀₉ alloy and InAs/InAs₀.₆₅Sb₀.₃₅ type-II superlattice materials grown on GaSb substrates. Standard temperature- and magnetic-field-dependent resistivity and the Hall measurements on mesa samples in the van der Pauw configuration are performed, and multicarrier fitting and modelling are used to isolate transport of each carrier species. The results show that up to 5 carrier species of the surface, interface and bulk variety contribute to conduction, with bulk electron and hole mobility up to 2·10⁵ cm²/V s and 8·10³ cm²/V s, respectively and background dopant concentration levels were between 10¹⁴ and 10¹⁵ cm¯³. The in-plane mobility temperatures dependence is determined and trends of each carrier species with temperature and dose are analysed.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144554
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors
Autorzy:
Martyniuk, Piotr
Benyahia, Djalal
Powiązania:
https://bibliotekanauki.pl/articles/2204216.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
molecular beam epitaxy
superlattice
X-ray diffraction
III-V semiconductor
Opis:
Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 μm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144557
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical study of back-to-back avalanche photodiodes for dual-band infrared applications
Autorzy:
Manyk, Tetiana
Majkowycz, Kinga
Rutkowski, Jarosław
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/2204171.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
IR detectors
HgCdTe avalanche photodiodes
excess noise
gain
dual-band detectors
Opis:
The dual-band avalanche photodiode (APD) detector based on a HgCdTe material system was designed and analysed in detail numerically. A theoretical analysis of the two-colour APD intended for the mid wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges was conducted. The main purpose of the work was to indicate an approach to select APD structure parameters to achieve the best performance at high operating temperatures (HOT). The numerical simulations were performed by Crosslight numerical APSYS platform which is designed to simulate semiconductor optoelectronic devices. The current-voltage characteristics, current gain, and excess noise analysis at temperature T = 230 K vs. applied voltage for MWIR (U = 15 V) and LWIR (U = –6 V) ranges were performed. The influence of low and high doping in both active layers and barrier on the current gain and excess noise is shown. It was presented that an increase of the APD active layer doping leads to an increase in the photocurrent gain in the LWIR detector and a decrease in the MWIR device. The dark current and photocurrent gains were compared. Photocurrent gain is higher in both spectral ranges.
Źródło:
Opto-Electronics Review; 2023, 31, 2; art. no. e145093
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cryogenic solutions for IR detectors : a guideline for selection
Autorzy:
Griot, René
Vasse, Christophe
Arts, Roel
Ivanov, Ruslan
Höglund, Linda
Costard, Eric
Powiązania:
https://bibliotekanauki.pl/articles/2204212.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
cryocoolers
Stirling rotary coolers
Stirling linear coolers
pulse tube coolers
infrared detectors
Opis:
As long as high resolution or long-range observation is to be achieved using infrared detection, it will be necessary to cool down the detector in order to reach the best sensitivity and dynamics. This paper describes different cooling solutions currently used for this purpose discussing advantages and drawbacks. Some guideline is given for cooler choice and selection. The focus is on rotary Stirling coolers illustrated by description of the RMs1 cooler dedicated to high operating temperature size, weight, and power infrared detectors. A user case study is presented with cooler power consumption and cool down time of the RMs1 cooler when integrated in IRnova’s Oden MW IDDCAs.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144566
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
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