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    Wyświetlanie 1-3 z 3
    Tytuł:
    Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel
    Autorzy:
    Khantoul, A.
    Sebais, M.
    Rahal, B.
    Boudine, B.
    Halimi, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030548.pdf
    Data publikacji:
    2018-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    Co doped ZnO
    XRD
    nanometric size
    photoluminescence
    Opis:
    We report on ZnO films doped with different Co concentrations (0, 0.5, and 1 wt%) prepared by sol-gel technique in association with dip-coating onto glass substrates. Zinc acetate dehydrate, cobalt acetate, mono ethanolamine were used as starting materials, as well as solvent and stabilizer, respectively. Nanostructured polycrystalline ZnO thin films with different concentrations of Co doping (0, 0.5, and 1 wt%) are prepared for the first time by the sol-gel method and annealed at 500°C for 1 h. The surface morphologies of the ZnO thin films deposited on glass substrate with different concentrations were evaluated by atomic force microscopy. The optical absorption of the films showed a blue shift of the band gap. The photoluminescence signal of the thin films of undoped and Co-doped ZnO presents different bands in the visible region. The electrical conductivity of the sample with 0.5%Co was found to be 4.62 (ΩCm)¯¹.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 1; 114-117
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties of ZnO Nanoparticles Synthesised from a Polysaccharide and ZnCl₂
    Autorzy:
    Bindu, P.
    Thomas, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032335.pdf
    Data publikacji:
    2017-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    ZnO nanoparticles
    UV-vis
    band gap
    Urbach energy
    Opis:
    In this article we study the optical properties of ZnO nanoparticles. This paper describes cost effective, high yield, and a facile synthetic method for the synthesis of ZnO nanoparticles from precursors viz. linear polysaccharide, chitosan, and ZnCl₂ by a precipitation method. The synthesized ZnO nanoparticles were characterized by surface area, pore size, and UV-visible measurements. The optical band gap and the Urbach energy were also calculated and the optical band gap energy of the synthesized ZnO nanoparticles was found to be 3.26 eV and the nature of the optical transition has been identified as direct allowed.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 6; 1474-1478
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Nitridation and Pre-Growth Annealing of the Sapphire Substrate on the Quality of Zinc Oxide Thin Films Grown by RF-Magnetron Sputtering
    Autorzy:
    Baseer Haider, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032562.pdf
    Data publikacji:
    2017-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    thin films
    wide bandgap semiconductors
    ZnO
    magnetron sputtering
    Opis:
    ZnO has attracted much attention due to its wide bandgap (3.2 eV) and high exciton binding energy of 60 meV. These properties make ZnO a highly desirable material for high frequency devices that can work in harsh environment. We have grown ZnO thin films at different temperatures ranging from 100°C to 500°C. We have observed that surface roughness is first decreased with the increase in the growth temperature but then by further increasing the growth temperature beyond 300°C, results in increased surface roughness of the grown samples, whereas grain size of the samples increases with the increase in the growth temperature. Crystalline quality of the films is also improved with the increase in the growth temperature but then degrades by further increase beyond 200°C. We achieved the highest Hall mobility for the ZnO sample grown at 200°C. The optimum growth condition of ZnO thin films on sapphire (0001) in our RF/DC magnetron-sputtering unit were achieved for the films grown at 200°C. Subsequently, we performed pre-growth treatment to the sapphire substrate then grew ZnO films at 200°C. Pre-growth treatment involved heating the substrate at 500°C for about half an hour and then etching the sapphire surface with nitrogen plasma. We have observed that pre-growth heating and nitridation of the sapphire substrate results in bigger grain size whereas no improvement was observed in the crystallinity of the film.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 4; 1325-1328
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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