Temat: THz - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Response of Indium Antimonide at Sub-Terahertz and Terahertz Frequencies
Autorzy:: Yavorskiy, D.
Karpierz, K.
Grynberg, M.
Łusakowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1033781.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: THz spectroscopy
InSb THz detector
Opis:: Responsivity of a bulk InSb detector at liquid helium temperature was studied in the frequency range 0.1 THz
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 338-339
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Surface Metallic Pattern for Enhancement of a THz Field in a Two-Dimensional Electron Plasma
Autorzy:: Tarkowski, T.
Łusakowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1033104.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: Metamaterials
THz field enhancement
Opis:: A metamaterial in the form of a periodic lattice of split-ring resonators on a GaAs/AlGaAs heterostructure was numerically studied at terahertz frequencies. A finite-difference time-domain algorithm was applied to calculate distribution of the electromagnetic field in the layer positioned at 100 nm below the heterostructure surface where a two-dimensional electron gas typically resides in real structures. The results allowed to determine the resonant frequencies of the metamaterial as well as an enhancement factor of the electric field as a function of the period of the metamaterial's lattice.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 332-334
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Sub-Terahertz Emission from Field-Effect Transistors
Autorzy:: Yavorskiy, D.
Karpierz, K.
Kopyt, P.
Grynberg, M.
Łusakowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1033125.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: Field-effect transistors
THz emission
Opis:: Several commercially available field-effect GaInAs-based transistors were studied as emitters of electromagnetic radiation. The emitters were tested either at room or at liquid helium temperature. To spectrally analyse emitted radiation, we applied three different experimental techniques: a spectrum analyser with antennas and mixers, a Michelson interferometer and a magnetic-field-tunable InSb detector. We show that the emission consists of a fundamental frequency of 11.5 GHz and its multiple harmonics spanning the emission band up to about 400 GHz. Analysis of the results allows us to suggest that the emission is caused by a Gunn effect and a high harmonics content is related to a pulse-like time dependence of the current.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 335-337
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja