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Wyświetlanie 1-9 z 9
Tytuł:
Observation of Thermally-Activated Electron Traps in GaAs/AlAs/GaAs Heterostructures in Low-Frequency Noise Measurements
Autorzy:
Przybytek, J.
Stankiewicz, R.
Gryglas-Borysiewicz, M.
Baj, M.
Cavanna, A.
Faini, G.
Powiązania:
https://bibliotekanauki.pl/articles/2048142.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Td
73.40.Gk
Opis:
During our investigations of tunneling process in thin 7 nm thick GaAs/AlAs/GaAs vertical single-barrier tunneling structure with Si δ-doping inside the barrier we have observed fluctuations of the tunneling current which exhibited large Lorentzian noise with intensity depending on biasing voltage. We have shown that Lorentzian noise originates from multilevel random telegraph noise of the small number of fluctuators which influence the tunneling process. Time-domain analysis of the current noise measured for temperatures between 4.2 K and 50 K enabled to determine the thermal activation energies of these fluctuators lying between 0.8 and 3 meV.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 723-725
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cross-Correlations and Charge Pumping in Shot Noise οf Coupled Quantum Dot System
Autorzy:
Michałek, G.
Bułka, B.
Powiązania:
https://bibliotekanauki.pl/articles/1791333.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.Hk
73.63.Kv
73.50.Td
Opis:
We analyze current auto- and cross-correlations in the system of two capacitively coupled large quantum dots. Our attention is focused on the strong inter-dot coupling when an electron transfer through one of the quantum dots induces charge pumping through the second quantum dot. We show individual contributions to shot noise from various tunneling processes in the charge space.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 879-881
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of Current Auto- and Cross-Correlations in Double Quantum Dots
Autorzy:
Michałek, G.
Bułka, B.
Powiązania:
https://bibliotekanauki.pl/articles/1810396.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.Hk
73.63.Kv
73.50.Td
Opis:
Studies of an enhancement of current shot noises are presented for a device of two large quantum dots coupled capacitively. We analyze current-current correlation functions, and show that a dynamical Coulomb blockade is responsible for an enhancement of the Fano factors. This process can lead also to an electron bunching and positive current cross-correlations. Our theoretical results are discussed in light of recent shot noise experiments.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 117-119
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Negative Differential Resistance and Super-Poissonian Shot Noise in a System of Single Electron Transistors
Autorzy:
Michałek, G.
Bułka, B. R.
Powiązania:
https://bibliotekanauki.pl/articles/2028848.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.Hk
73.40.Gk
73.50.Td
Opis:
Currents and their fluctuations in two capacitively coupled single electron transistors were studied within the sequential tunneling approach. A special attention was focused on the effect of the negative differential resistance, which appears due to the Coulomb interactions of accumulated charges on both the single electron transistors. In this case large polarization fluctuations are activated, which results in a significant enhancement of the current shot noise.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 431-436
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Current Fluctuations in Single Barrier Vertical GaAs/AlAs/GaAs Tunneling Devices
Autorzy:
Przybytek, J.
Baj, M.
Powiązania:
https://bibliotekanauki.pl/articles/2047380.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Td
73.40.Gk
73.43.Jn
Opis:
We report the experimental results of the low temperature (T = 4.2 K) low-frequency current fluctuations measurements in the single-barrier resonant tunneling GaAs/AlAs/GaAs device with Siδ-doping in the center of the 10 nm thick AlAs barrier. The dimensions of the device were 200μm by 200μm. For the biasing voltages 0.1 V<|U|<1 V we observed the Fano factors between F = 0.7 and F = 0.95. We explain it by the existence of the trapping centers/imperfections/resonant levels inside the barrier participating in the transport for this range of voltages. Only for the smallest biasing voltages the Fano factor tends to F = 1, expected for a highly nontransparent barrier.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 221-226
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport in Quantum Structures of Diluted Magnetic Semiconductors
Autorzy:
Jaroszyński, J.
Powiązania:
https://bibliotekanauki.pl/articles/2011139.pdf
Data publikacji:
1999-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Td
72.15.Rn
73.61.Ga
75.50.Lk
Opis:
This paper reviews recent millikelvin studies of magnetoconductance and noise in nanostructures of a diluted magnetic semiconductor n-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te. These studies were particularly rewarding for probing the influence of magnetic ions upon mesoscopic phenomena. The accumulated results demonstrated the existence of a new driving mechanism of the universal conductance fluctuations in magnetic systems. Several signatures of spin-glass freezing were observed, such as the appearance of 1/f conductance noise, aging, thermal, and magnetic irreversibilities as well as a strong increase in the amplitude of both conductance fluctuations and noise when temperature and the magnetic field were lowered below the freezing line. A statistical analysis of conductance noise made it possible to investigate the nature of excitations in spin-glass phase, and to discriminate between competing theoretical models.
Źródło:
Acta Physica Polonica A; 1999, 96, 5; 641-650
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Current Fluctuations in Ferromagnetic Tunnel Junctions
Autorzy:
Bułka, B. R.
Martinek, J.
Michałek, G.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/2013034.pdf
Data publikacji:
2000-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Pa
73.50.Td
73.23.Hk
73.40.Gk
Opis:
Current shot noise in a double junction consisting of a small metallic grain connected to two ferromagnetic electrodes is analysed in the limit of sequential tunneling. We show that, apart from charge fluctuations, there are strong spin fluctuations. We also show that two distinct relaxation processes can be distinguished in the frequency dependent current noise: one in a low frequency range and corresponding to spin fluctuations and another one in a high frequency range corresponding to charge fluctuations.
Źródło:
Acta Physica Polonica A; 2000, 97, 3; 423-426
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Statistics of Conductance and Shot-Noise Power for Chaotic Cavities
Autorzy:
Sommers, H.-J.
Wieczorek, W.
Savin, D. V.
Powiązania:
https://bibliotekanauki.pl/articles/2047832.pdf
Data publikacji:
2007-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.-b
73.50.Td
05.45.Mt
73.63.Kv
Opis:
We report on an analytical study of the statistics of conductance, g, and shot-noise power, p, for a chaotic cavity with arbitrary numbers N$\text{}_{1,2}$ of channels in two leads and symmetry parameterβ = 1, 2, 4. With the theory of Selberg's integral the first four cumulants of g and first two cumulants of p are calculated explicitly. We give analytical expressions for the conductance and shot-noise distributions and determine their exact asymptotics near the edges up to linear order in distances from the edges. For 0 < g < 1 a power law for the conductance distribution is exact. All results are also consistent with numerical simulations.
Źródło:
Acta Physica Polonica A; 2007, 112, 4; 691-697
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Dynamics in $Ga_{1-x}Mn_{x}As$ Studied by Resistance Noise Spectroscopy
Autorzy:
Lonsky, M.
Teschabai-Oglu, J.
Pierz, K.
Sievers, S.
Schumacher, H.
Yuan, Y.
Böttger, R.
Zhou, S.
Müller, J.
Powiązania:
https://bibliotekanauki.pl/articles/1397018.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
73.50.Td
73.50.-h
73.61.-r
64.60.ah
61.72.-y
Opis:
We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 520-522
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-9 z 9

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