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    Wyświetlanie 1-5 z 5
    Tytuł:
    Density of Electron States and Relaxation Time of Intercalated Layer Crystals
    Autorzy:
    Tovstyuk, N.
    Sheregiy, Ye.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402585.pdf
    Data publikacji:
    2015-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.-b
    71.55.-i
    77.22.Gm
    Opis:
    The density of electron states of layered crystal intercalated by guests of different nature is calculated within the framework of virtual crystal considering filling of both octahedral and tetrahedral interstitial hollows. It is found that the shift of the gap of density of states is caused firstly by the nature of intercalant (placing of ground energy states of both intercalants) and their average concentrations. In the case when one type of intercalant gives localized level in the forbidden gap and another intercalant forms the resonance one in the conductive band the gap disappears. Relaxation time corresponding to the transitions from one to another band is calculated.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 2; 225-227
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    SU(2) Coherent State Path Integral Investigation of the Holstein Dimer
    Autorzy:
    Hakioğlu, T.
    Ivanov, V. A.
    Zhuravlev, M. Ye.
    Powiązania:
    https://bibliotekanauki.pl/articles/2013732.pdf
    Data publikacji:
    2000-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    03.65.Db
    71.36.+c
    64.60.Ak
    Opis:
    The SU(2) coherent state path integral is used to investigate the partition function of the Holstein dimer. This approach naturally takes into account the dynamical symmetry of the model. The ground-state energy and the number of the phonons are calculated as functions of the parameters of the Hamiltonian. The renormalizations of the phonon frequency and electron hopping for bonding and antibonding states are considered. The destruction of quasiclassical mean field solution is discussed.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 5; 927-930
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cobalt Additives Influence on Phase Composition and Defect Structure of Manganese Dioxide Prepared from Fluorine Containing Electrolytes
    Autorzy:
    Sokolsky, G.
    Ivanov, S.
    Ivanova, N.
    Boldurev, Ye.
    Kobulinskaya, O.
    Demchenko, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1550089.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.66.Fn
    61.72.-y
    85.40.Ry
    Opis:
    Manganese dioxide samples were prepared from fluorine containing electrolytes with additives of $Co^{2+}$ ions. Atomic absorption spectroscopy, thermogravimetric analysis, X-ray diffraction, scanning electron microscopy with energy dispersive X-ray analysis were the methods of the samples characterisation. Manganese dioxide at the presence of cobalt forms nanosized ramsdellite structure crystallites of mostly needle-like morphology with significant content of hydroxide groups. The main phase state in manganese dioxide samples obtained at the presence of cobalt is $γ-MnO_{2}$ with ramsdellite structure and low content of intergrowth defects. The sample doped both with lithium and cobalt can be indexed to a hollandite-type structure (tetragonal; space group I4/m) of $α-MnO_{2}$.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 86-90
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Supercapacity of Soft-Expanded Graphite in Li-Intercalational Electric Current Generation
    Autorzy:
    Shvets, R.
    Grygorchak, I.
    Kurepa, A.
    Pokladok, N.
    Sementsov, Yu.
    Dovbeshko, G.
    Sheregii, Ye.
    Seredyuk, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402576.pdf
    Data publikacji:
    2015-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.16.Fg
    82.45.Vp
    Opis:
    A microwave-intercalation modification of natural graphite which ensures its effective use as a cathode material of Li-based sources of electric current is developed. Interconnection between the parameters of modification and thermodynamic and kinetic behavior of Li-intercalation electric current generation is established. On the basis of the obtained data from impedance spectroscopy, X-ray diffractometry analysis, and spectroscopy of the Raman scattering of light, the mechanism of the observed phenomena is suggested.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 2; 208-209
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique
    Autorzy:
    Wang, H. Y.
    Weng, H. M.
    Ling, C. C.
    Ye, B. J.
    Zhou, X. Y.
    Han, R. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043365.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    68.35.Ct
    73.40.Sx
    Opis:
    Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of S$\text{}_{B}$ and L$\text{}_{+,B}$ of the GaSb bulk showed the annealing out of positron traps (possibly the V$\text{}_{Ga}$-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of V$\text{}_{Ga}$-related defect and the positron shallow trap GaSb antisite.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 874-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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