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Wyszukujesz frazę "Yang, S.-C." wg kryterium: Autor

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    Wyświetlanie 1-5 z 5
    Tytuł:
    Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
    Autorzy:
    Miasojedovas, S.
    Juršėnas, S.
    Kurilčik, G.
    Žukauskas, A.
    Springis, M.
    Tale, I.
    Yang, C. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041743.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.45.+h
    78.47.+p
    78.67.De
    Opis:
    We report on high-excitation luminescence spectroscopy of In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 256-260
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
    Autorzy:
    Juršėnas, S.
    Kuokštis, E.
    Miasojedovas, S.
    Kurilčik, G.
    Žukauskas, A.
    Chen, C. Q.
    Yang, J. W.
    Adivarahan, V.
    Asif Khan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038100.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 567-573
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interaction of Magnetic Nanoparticles with Lyotropic Liquid Crystal Studied by AFM
    Autorzy:
    Tomašovičová, N.
    Yang, C.
    Balejčíková, L.
    Gdovinová, V.
    Kubovčíková, M.
    Hayryan, S.
    Hwang, I.
    Hu, Chin-Kun
    Kopčanský, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032211.pdf
    Data publikacji:
    2017-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.75.Fk
    87.14.em
    82.37.Gk
    Opis:
    In this work the interaction of lysozyme fibrils with magnetic particles has been studied by atomic force microscopy. The experiments were carried out for a better understanding of the binding process of such complex soft matter systems. The obtained results show that interaction between lysozyme fibrils and magnetic particles starts immediately after mixing them together. Moreover, the samples remain stable in duration of several days after preparation.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 4; 958-960
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
    Autorzy:
    Juršėnas, S.
    Miasojedovas, S.
    Kurilčik, G.
    Liuolia, V.
    Žukauskas, A.
    Chen, C. Q.
    Yang, J. W.
    Kuokštis, E.
    Adivarahan, V.
    Asif Khan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041736.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 235-239
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Pulsed Power and Power Conditioning Capacitors
    Autorzy:
    Macdougall, F.
    Jow, T.
    Ennis, J.
    Yang, X.
    Yen, S.
    Cooper, R.
    Gilbert, J.
    Schneider, M.
    Naruo, C.
    Bates, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807873.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.32.Tt
    84.60.Ve
    Opis:
    A capacitor development effort focused on capacitors used in pulsed power and power conversion applications underwent at General Atomics Electronic Systems Inc. (GA-ESI) for decades. In recent years, funding for these efforts has accelerated the rate of development progress to the point where the time it takes to decrease the size of a capacitor by half has dropped from 10 years to 4 years. This progress made in pulsed power and power conversion capacitors will be described along with the performance characteristics of today's capacitors.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 989-991
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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