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Wyszukujesz frazę "Wisniewska, E." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Materials Research on Archaeological Objects Using PIXE and Other Non-Invasive Techniques
Autorzy:
Miśta, E.
Stonert, A.
Korman, A.
Milczarek, J.
Fijał-Kirejczyk, I.
Kalbarczyk, P.
Wiśniewska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402188.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Bx
82.80.Ej
82.80.Dx
82.80.Ms
82.80.Pv
Opis:
An interdisciplinary study of metallic objects from selected archaeological sites in Poland was performed. The aim of the project was to obtain information about the chemical composition and structural changes of the objects. Furthermore, the research results provided information about the technological process which was used to manufacture the artifacts. The materials research had a non- and micro-invasive character which is very important in this type of investigation. The main experimental tools were particle-induced X-ray emission supplemented with nuclear reaction thermal neutron (white beam) radiography, scanning electron microscopy with X-ray energy dispersive analysis, and laser ablation inductively coupled plasma mass spectrometry techniques. The results show that the artifacts were made by a secondary smelting process used in local metallurgy manufactures.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 815-817
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration
Autorzy:
Grzanka, S.
Łuka, G.
Krajewski, T. A.
Guziewicz, E.
Jachymek, R.
Purgal, W.
Wiśniewska, R.
Sarzyńska, A.
Bering-Staniszewska, A.
Godlewski, M.
Perlin, P.
Powiązania:
https://bibliotekanauki.pl/articles/2048094.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.40.Kp
73.40.Lq
Opis:
Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10$\text{}^{17}$ cm$\text{}^{-3}$. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10$\text{}^{20}$ cm$\text{}^{-3}$. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10$\text{}^{-3}$ Ω cm$\text{}^{2}$. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 672-674
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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