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Wyszukujesz frazę "Wasilewski, J" wg kryterium: Autor


Wyświetlanie 1-9 z 9
Tytuł:
A Finite-Element Flash Method for Measuring Thermal Conductivity of Liquid
Autorzy:
Mamczur, J.
Wasilewski, A.
Więcek, T.
Powiązania:
https://bibliotekanauki.pl/articles/1402572.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
44.05.+e
44.10.+i
07.05.Tp
02.70.Dh
02.60.Ed
Opis:
A laser beam is used to heat a portion of liquid closed in a vessel from the top of it to avoid convection. The temperature is measured at the bottom of the vessel by a laser waveguide sensor. The heating and measuring methods allow using a small amount of liquid of the order of a milliliter fraction. The heat flow through the liquid as well as the surrounding vessel and space is modeled by the finite-element method to calculate the temperature at the bottom vs. time. Thus obtained dependence is used then as a fitting function to get the liquid thermal conductivity among some other fitting parameters.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 193-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Faraday Rotation in Multiple Quantum Wells of GaAs/AlGaAs
Autorzy:
Dudziak, E.
Bożym, J.
Pruchnik, D.
Wasilewski, Z. R.
Powiązania:
https://bibliotekanauki.pl/articles/1952529.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ls
73.20.Dx
78.66.Fd
Opis:
We report on the results of first measurements of the Faraday rotation of modulated n-doped multiple quantum wells of GaAs/Al$\text{}_{x}$Ga$\text{}_{1-x}$As (x = 0.312). The measurements have been performed in the magnetic fields up to 13 T at the temperature of 2 K, in the spectral region of interband transitions. A rich structure of magneto-excitons has been found in the measured spectra. Faraday rotation (phase) measurements are proposed as an alternative method to photoluminescence excitation for investigations of magneto-excitons in quantum wells. The dependence of the measured Faraday rotation on magnetic field and hypothetical connections with quantum Hall effect are also discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1022-1026
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Large Filling-Factor-Dependent Spin Splitting in Magnetooptic Kerr Effect in GaAs/AlGaAs Multiple Quantum Wells
Autorzy:
Dudziak, E.
Bozym, J.
Pruchnik, D.
Wasilewski, Z. R.
Powiązania:
https://bibliotekanauki.pl/articles/1969050.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ls
73.20.Dx
78.66.Fd
Opis:
Magnetooptic Kerr effect in GaAs/Al$\text{}_{0.312}$Ga$\text{}_{0.688}$As multiple quantum wells was investigated in the integer quantum Hall regime. The measurements have been performed in magnetic fields up to 14.5 T, at the temperature of 1.8 K. Experimental data indicate the discontinuous behavior of the magnetooptic Kerr effect spectrum as a function of the filling factor. For odd filling factor values ν=3 and 5 we observe the large spin splitting. The effects cannot be explained in the one-particle model.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 291-296
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Localization of Excitons in the Wetting Layer Accompanying Self-Assembled InAs/GaAs Quantum Dots
Autorzy:
Babinski, A.
Raymond, S.
Wasilewski, Z.
Lapointe, J.
Potemski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2038091.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Pq
71.35.Ji
71.70.Ej
Opis:
A wetting layer is a narrow, highly strained quantum well, which accompanies quantum dots grown in Stranski-Krastanow mode. Its importance for a full description of the quantum dots properties has recently been pointed out. It has been shown for example that excitons can be localized by potential fluctuations in the wetting layer. This is equivalent to the formation of "natural" quantum dots in the WL. Excitonic emission from the single dots formed in the wetting layer accompanying the InAs/GaAs self-assembled quantum dots has been investigated in a high magnetic field (up to 23 T). Quadruplet splitting of the investigated emission line has been observed. The attribution of the emission line to the recombination of negatively charged exciton is discussed.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 547-552
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Confinement in InAs/GaAs Systems with Self-Assembled Quantum Dots Grown Using In-Flush Technique
Autorzy:
Molas, M.
Kuldová, K.
Borysiuk, J.
Wasilewski, Z.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/2048050.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
The effect of In-flush technique application to the MBE-grown structure with self-assembled quantum dots is investigated in this work. The microphotoluminescence from structures with the InAs/GaAs dots grown with and without the In-flush has been investigated. We focus our attention on "not fully developed" dots, which can be clearly distinguished in the spectrum. The dots have also been identified in the transmission electron microscopy analysis of the structures. The In-flush does not influence a broad energy range of those features. Instead we have found that the anisotropic exchange energy splitting of neutral excitons confined in those in the structure grown with In-flush is substantially lower that the splitting in the structure with no In-flush. This observation confirms that the In-flush leads not only to better uniformity of self-assembled quantum dots but also to reduction of lateral potential, anisotropy, which is believed to result in the neutral exciton splitting.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 624-626
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Neutral and Charged Excitons Localized in the InAs/GaAs Wetting Layer
Autorzy:
Babiński, A.
Czyż, M.
Golnik, A.
Borysiuk, J.
Kret, S.
Raymond, S.
Lapointe, J.
Wasilewski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1811914.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.55.Cr
78.67.Hc
Opis:
It has recently been shown that potential fluctuations in a wetting layer, which accompanies InAs/GaAs quantum dots can localize excitons. Neutral excitons and biexcitons and charged excitons were identified. In this communication we report on studies of properties of the excitons over wide temperature range (T < 70 K). The micro-photoluminescence measurements enable investigation of excitons localized in a single potential fluctuation. Temperature-induced broadening of the neutral exciton as well as a quenching of the charged exciton at temperatures higher than 50 K are observed and discussed.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1055-1060
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Fine Structure of a Triexciton in Single InAs/GaAs Quantum Dots
Autorzy:
Molas, M.
Gołasa, K.
Furman, M.
Lapointe, J.
Wasilewski, Z.
Potemski, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1403615.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Results of experimental study of multiexcitonic emission related to the p-shell of single self-assembled InAs/GaAs quantum dots are presented. Optical properties of a first emission line to appear from the p-shell of a strongly excited quantum dots are investigated using low-temperature polarization-sensitive micro-photoluminescence measurements. The emission line is attributed to the recombination of a complex of three electrons and holes confined in a dot (neutral triexciton), 3X. It is found that the emission consists of two linearly polarized components and the fine structure splitting is larger than the respective splitting of a neutral exciton. The optical anisotropy of the 3X emission is related to the anisotropy of the quantum dot localizing potential. The axis of the 3X optical anisotropy changes from dot to dot covering broad range within ± 50 degrees with respect to the axis defined by the optical anisotropy of a neutral exciton (X). Possible origin of the deviation is discussed.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 991-993
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Breakdown of the Quantum Hall Effect
Autorzy:
Maude, D. K.
Rigal, L. B.
Desrat, W.
Potemski, M.
Portal, J. C.
Eaves, L.
Wasilewski, Z. R.
Toropov, A. I.
Hill, G.
Powiązania:
https://bibliotekanauki.pl/articles/2027467.pdf
Data publikacji:
2001-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Pm
74.25.Dw
Opis:
The breakdown of the dissipationless conductance in the integer and fractional quantum Hall effect regime is reviewed. The temperature dependence of the critical current and of the critical magnetic field at breakdown bears a striking resemblance to the phase diagram of the phenomenological two-fluid Gorter-Casimir model for superconductivity. In addition, a remarkably simple scaling law exists between different filling factors.
Źródło:
Acta Physica Polonica A; 2001, 100, 2; 213-226
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors
Autorzy:
Teppe, F.
Consejo, C.
Torres, J.
Chenaud, B.
Solignac, P.
Fathololoumi, S.
Wasilewski, Z.
Zholudev, M.
Dyakonova, N.
Coquillat, D.
El Fatimy, A.
Buzatu, P.
Chaubet, C.
Knap, W.
Powiązania:
https://bibliotekanauki.pl/articles/1492959.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
07.57.Kp
52.35.-g
Opis:
We report on the resonant detection of a 3.1 THz radiation produced by a quantum cascade laser using a 250 nm gate length GaAs/AlGaAs field effect transistor at liquid nitrogen temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is enhanced by increasing the drain current and driving the transistor into saturation regime. These results clearly show that plasma wave nanometer-size transistors can be used as detectors in all-solid-state terahertz systems where quantum cascade lasers act as sources.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 930-932
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-9 z 9

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