Autor: Warchoł, S. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Effect of Manganese Concentration on Thermoluminescent Properties of $YAlO_{3}:Mn$ Crystals
Autorzy:: Zhydachevskii, Ya.
Suchocki, A.
Berkowski, M.
Warchol, S.
Powiązania:: https://bibliotekanauki.pl/articles/1550510.pdf
Data publikacji:: 2010-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.Kn
61.80.Ed
61.72.Ji
Opis:: This work is devoted to experimental study of the effect of manganese concentration on thermoluminescent properties of $YAlO_{3}:Mn$ crystals grown by the Czochralski method. A new type of emitting centers beside of $Mn^{4+}$ and $Mn^{2+}$ ions was revealed at low concentration of manganese ions in the crystal. These centers are responsible for the high-temperature thermoluminescent peak at 570 K. A potential of this thermoluminescent peak for thermoluminescence dosimetry application is discussed.
Źródło:: Acta Physica Polonica A; 2010, 117, 1; 177-180
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Damage Production in As Implanted GaAs$\text{}_{1-x}$P$\text{}_{x}$
Autorzy:: Krynicki, J.
Warchoł, S.
Rzewuski, H.
Groetzschel, R.
Powiązania:: https://bibliotekanauki.pl/articles/1932091.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Jh
Opis:: Post-implantation damage in GaAs$\text{}_{1-x}$P$\text{}_{x}$ compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10$\text{}^{13}$ -8 × 10$\text{}^{13}$ cm$\text{}^{-2}$ at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He$\text{}^{+}$ channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 249-252
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Effect of Annealing and Irradiation on the Optical Properties of Oxide Crystals
Autorzy:: Kaczmarek, S. M.
Berkowski, M.
Moroz, Z.
Warchoł, S.
Powiązania:: https://bibliotekanauki.pl/articles/2011084.pdf
Data publikacji:: 1999-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ji
61.80.Ed
Opis:: We described results of the effect of annealing and irradiation treatments on the optical properties of Y$\text{}_{3}$Al$\text{}_{5}$O$\text{}_{12}$, YAlO$\text{}_{3}$, SrLaGa$\text{}_{3}$O$\text{}_{7}$, LiNbO$\text{}_{3}$, Gd$\text{}_{3}$Ga$\text{}_{5}$O$\text{}_{12}$, LaGaO$\text{}_{3}$, ZnSe, and LiF single crystals. Changes in absorption and luminescence are presented. Recharging processes of uncontrolled impurities (e.g. Fe$\text{}^{3+}$, Fe$\text{}^{2+}$, and Mn$\text{}^{2+}$), and active ions (e.g. Nd$\text{}^{3+}$, Dy$\text{}^{3+}$, Cr$\text{}^{4+}$, Cr$\text{}^{3+}$, and Ce$\text{}^{3+}$), as well as types of color centers produced in the crystals after a particular irradiation or annealing treatment are presented.
Źródło:: Acta Physica Polonica A; 1999, 96, 3-4; 417-427
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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