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    Wyświetlanie 1-5 z 5
    Tytuł:
    High Pressure Far-Infrared Magnetooptical Studies of Sn and S Donors in GaAs
    Autorzy:
    Dmochowski, J. E.
    Wang, P. D.
    Stradling, R. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1888152.pdf
    Data publikacji:
    1991-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    78.50.Ge
    Opis:
    The diamond anvil cell technique is applied for magneto-optical far-infrared transmission experiments with LPE grown GaAs:Sn. The 1s-2p(+) intra-shallow-Γ-donor transition is investigated as a function of high hydrostatic pressure for Sn and residual S donors. Both donors are shallow up to 30 kbar. Above this pressure both donors become deep and shallow donor absorption is persistently bleached due to deep non-metastable (non DX-like) states of the donors entering the gap of GaAs.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 2; 279-282
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors
    Autorzy:
    Sherliker, B.
    Halsall, M. P.
    Harrison, P.
    Jovanović, V. D.
    Indjin, D.
    Ikonić, Z.
    Parbrook, P. J.
    Whitehead, M. A.
    Wang, T.
    Buckle, P. D.
    Phillips, J.
    Carder, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041680.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    Opis:
    We report the growth and characterization of AlGaN/GaN multiple quantum well structures designed to have intersubband transitions in the mid-infrared region of the spectrum. The samples were nominally undoped but were found to contain a high electron population in the wells induced by the local polarization fields. The sample was characterized by the use of the Raman spectroscopy and photocurrent spectroscopy. The Raman spectroscopy shows electronic Raman scattering from intersubband transitions in the AlGaN/GaN quantum wells. The e$\text{}_{1}$-e$\text{}_{2}$ and e$\text{}_{1}$-e$\text{}_{3}$ transitions of the confined 2d electron population in the wells can clearly be observed. A sample designed to absorb at 4μm was fabricated into mesa structures and the vertical photocurrent measured under normal incidence illumination from the free-electron laser FELIX. A wavelength and bias dependent photocurrent was observed in the mid-IR region of spectrum. The peak responsivity was of the order of 50μA/W at 4 K, the photocurrent still being measurable at room temperature.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 174-178
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characteristics of Magnetic Core in Magnetic Pulse Compression System
    Autorzy:
    Zhang, D.
    Yan, P.
    Sun, Y.
    Wang, J.
    Zhou, Y.
    Pan, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807880.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.05.Tp
    42.65.Re
    75.60.Ej
    Opis:
    In order to obtain the characteristics of magnetic core under ≈0.5-5 μs saturation time, a one-stage magnetic pulse compression circuit without external demagnetization circuits which are commonly used in magnetic compressors is designed. The current through the core is calculated by voltage across the resistive load, and the loop voltage is picked up with a single wire loop and integrated by software. B-H curves are derived from the measured voltage and current wave forms. B-H curves show that the core loss is in inverse proportion to the time to saturation, whereas the percentile core loss decreases as the charging energy increases. While the eddy current loss and dissipated energy are in direct proportion to dB/dt. The low inductance of magnetic switch indicates that the core is saturated and behaves as an air core. By applying custom characteristics to each stage in Pspice simulation, more practical energy transfer in magnetic pulse compression and the effects of leakage current are presented.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1001-1003
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synchronization Study and Introductory Experiment οf Laser-Triggered Surface Flashover in Voltage Pulse
    Autorzy:
    Pan, R.
    Wang, J.
    Sun, Y.
    Sun, G.
    Yan, P.
    Zhang, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807974.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.80.-s
    51.50.+v
    Opis:
    With the aim of studying the characteristics of laser-triggered surface flashover in voltage pulse, synchronization problem of laser pulse and voltage pulse should be solved. A single/double harmonic, with wavelength λ of 1064/532 nm, Q-switched Nd:YAG laser is used to trigger the surface flashover. The synchronization problem is solved using a self-made digital delay/pulse generator. The delay time and jitter of Marx's trigger input and output, Marx's trigger output and Marx's output, laser input and output are respectively measured. Based on the result of the delay time and the timing sequence of the laser triggering system, the synchronization of laser pulse and voltage pulse is obtained through adjusting the channel delay time of digital delay/pulse generator. In addition, introductory experiment of laser-triggered surface flashover is carried out using the flat electrodes and columned insulators.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1167-1169
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Study of GaN
    Autorzy:
    Zhang, X.
    Kung, P.
    Saxler, A.
    Walker, D.
    Wang, Τ.
    Razeghi, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933686.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.-w
    71.55.Eq
    68.55.-a
    Opis:
    Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al$\text{}_{2}$O$\text{}_{3}$ (100), (111)Si, and (00.1)6H-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant-related emissions from doped samples were observed. Deep-level yellow emission centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 601-606
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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