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    Wyświetlanie 1-7 z 7
    Tytuł:
    Effect of Granule Shape on the Giant Magnetoresistance for Ferromagnetic Metal-Metal Granular Films
    Autorzy:
    Wang, C.
    Zhang, P.
    Zhang, Y.
    Rong, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/1814027.pdf
    Data publikacji:
    2007-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Gd
    75.47.-m
    75.50.-y
    Opis:
    In order to investigate the effect of granule shape on the giant magnetoresistance, assuming that granular films consist of ellipsoidal ferromagnetic granules embedded in a nonmagnetic metal matrix and the ellipsoidal granules have different demagnetizing factors in three directions, we combined two-current model with the effective medium theory to investigate the effect of granule shape on the giant magnetoresistance. The results revealed that the giant magnetoresistance in granular films depended strongly on the granule shape and was between those for current perpendicular to the plane of the layers and current in the plane of the layers in magnetic multilayers.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 6; 1231-1238
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Compositions of Al-Based Quasicrystals Interpreted by Cluster Formulae
    Autorzy:
    Chen, H.
    Qiang, J.
    Wang, Y.
    Dong, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1372748.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.44.Br
    36.40.-c
    71.20.Lp
    Opis:
    It is known previously that bulk metallic glass compositions satisfy cluster formulae $[cluster](glue atom)_{1, 3}$ of 24 valence electrons as deduced from our cluster-resonance model. In the present work, it is further shown that compositions of Al-based binary and ternary quasicrystals are also explained by 24-electron cluster formulae of the types $[icosahedron](glue atom)_{0, 1}$, where the icosahedral cluster is identified from a corresponding crystalline approximant according to dense atomic packing and cluster isolation criteria, and the glue atom site is either vacant for an icosahedral quasicrystal or equal to one for a decagonal quasicrystal. Ternary quasicrystals are formulated with the same formulae as their basic binary ones but the icosahedron shell sites are substituted by third elements. The 24-electron cluster formulae are then the chemical and electronic structural units of quasicrystals, mimicking the molecular formulae of chemical substances.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 446-448
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Influence of Different Resin Cements and Pretreatments on the Bond Strength between Zirconia and Cement
    Autorzy:
    Sun, T.
    Hu, C.
    Wang, L.
    Shao, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1218424.pdf
    Data publikacji:
    2014-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    87.85.jc
    Opis:
    The aim of this study was to analyze the influence of various luting materials and surface treatments on adhesive strength for zirconia ceramics and luting cements. The zirconia framework specimens were made into cylinders. Prior to cement, zirconia framework specimens underwent various surface treatments (sandblasting with 110 μm $Al_2O_3$ particles, milling with 240-grift silicon sand paper and silanization). Resin luting cement and glass ionomer luting cement were then applied on the surface of zirconia specimens. The specimens were then subjected to a shear force. The fractured surfaces were visually analyzed by scanning electron microscopy. The shear bond strength values of resin luting cement bonded to zirconia specimens were significantly higher than glass ionomer luting cement bonded to zirconia specimens (P < 0.05). The shear bond strength values of zirconia specimens sandblasted with 110 μm $Al_2O_3$ particles were significantly higher than those milled with silicon carbide papers and underwent silanization (P < 0.05). The shear bond strength values of zirconia specimens milled with silicon carbide papers and underwent silanization were not significantly different (P < 0.05). The highest shear bond strength values were achieved when the zirconia specimens were sandblasted and bonded to resin luting cement. Airborne-particle abrasion was an effective method which could enhance the bond strength of zirconia ceramics and cements. The resin luting cement exhibited a higher bond to zirconia than glass ionomer luting cement.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 2; 313-315
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electric Interaction between Two Identical Conducting Spheres in a Uniform Electric Field
    Autorzy:
    Gao, X.
    Wang, Q.
    Li, C.
    Hu, L.
    Sun, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1401870.pdf
    Data publikacji:
    2015-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    41.20.Cv
    47.65.Gx
    Opis:
    An experimental apparatus is devised to measure the interaction between two spheres separated by a small gap in a uniform electric field. The results show that the interaction between two conducting spheres is near that between two dielectric spheres with high permittivity. Accordingly, the calculation can be simplified by mirror image method, for it is only available for conducting system. A method using multiple mirror images of point charges is put forward to analyze the induction of two identical conducting spheres in a uniform electric field. The key operation on how to add compensative charges is emphasized and given out in detail. The results from experiment and calculation are compared, and they agree with each other very well.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 3; 289-293
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth of β-$Ga_2O_3$ Nanorods and Photoluminescence Properties
    Autorzy:
    Zhang,, S.
    Zhuang, H.
    Xue, C.
    Li, B.
    Shen, J.
    Wang, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1814023.pdf
    Data publikacji:
    2007-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.-k
    79.60.Jv
    81.15.Cd
    Opis:
    β-$Ga_2O_3$ nanorods were successfully fabricated through annealing $Ga_2O_3$/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline $Ga_2O_3$ with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-$Ga_2O_3$ single crystal. The growth process of the β-$Ga_2O_3$ nanorods is probably dominated by conventional vapor-solid mechanism.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 6; 1195-1201
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Improving Triggering Characteristics for a Surface-Flashover Triggered Vacuum Switch
    Autorzy:
    He, Z.
    Wang, L.
    Li, F.
    Yao, W.
    Dong, M.
    Zhao, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807889.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.80.Vp
    52.75.Kq
    52.25.Mq
    Opis:
    A surface-breakdown triggered vacuum switch with parallel disk electrodes and semiconductor surface flashover trigger electrode has many advantages, it is easy to be triggered and machined. The resistance of the trigger gap has been increased in terms of modifying the thickness of the semiconductor layer and improving coating process technology. The trigger gap resistance, trigger voltage and trigger waveforms were experimentally tested. The results show that the triggering characteristics can be improved by increasing the trigger resistance.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1019-1021
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique
    Autorzy:
    Wang, H. Y.
    Weng, H. M.
    Ling, C. C.
    Ye, B. J.
    Zhou, X. Y.
    Han, R. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043365.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    68.35.Ct
    73.40.Sx
    Opis:
    Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of S$\text{}_{B}$ and L$\text{}_{+,B}$ of the GaSb bulk showed the annealing out of positron traps (possibly the V$\text{}_{Ga}$-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of V$\text{}_{Ga}$-related defect and the positron shallow trap GaSb antisite.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 874-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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