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Wyświetlanie 1-15 z 257
Tytuł:
Nonlinear Optical Measurements of Elastic Constants in Nematic Liquid Crystal
Autorzy:
Bajdecki, W. K.
Karpierz, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/2008272.pdf
Data publikacji:
1999-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.-k
42.70.Df
Opis:
A new method of measurements of elastic constants of nematic liquid crystals by applying the nonlinear optical effect is presented. This method bases on measurements of a value of the reorientation threshold in a liquid crystal layer while the reorientation is induced by the light beam passing through the layer. The obtained results are in a qualitative compatibility with the results obtained by classical methods.
Źródło:
Acta Physica Polonica A; 1999, 95, 5; 793-800
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of External Electric Field on Time of Nonlinear Optical Reorientational Effect in Nematics
Autorzy:
Bajdecki, W. K.
Karpierz, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/2035684.pdf
Data publikacji:
2003
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.-k
42.70.Df
Opis:
Nonlinear reorientation phenomena in nematic liquid crystals cause extremely large refractive index changes. However, this effect is relatively slow and the determination of the time necessary to appearing or disappearing of the nonlinear effect is an important issue. In this work we present measurements of the time of increasing the nematics reorientation induced by the light beam passing through the liquid crystalline layer. The influence of external low-frequency electric field suppressing reorientation is also reported. The obtained results describing relations between time and optical power of light as well as between time and external electric field intensity are in good agreement with theory.
Źródło:
Acta Physica Polonica A; 2003, 103, 2-3; 187-193
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reorientational Nonlinear Phenomena in Thin Nematic Liquid Crystals Layer
Autorzy:
Brzdąkiewicz, K.
Bajdecki, W. K.
Kozanecka, A.
Karpierz, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/2023855.pdf
Data publikacji:
2001-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.-k
42.70.Df
Opis:
In this paper the detailed study of the self-diffraction phenomena due to reorientational optical nonlinearity in nematic liquid crystalline cell is presented. The optical nonlinear effect is additionally modified by external low-frequency electric field. The dependence of nonlinear response on light polarization is also analyzed. The theoretical investigations are compared with experimental results and the theoretical predictions are in excellent agreement with experimental data.
Źródło:
Acta Physica Polonica A; 2001, 99, 1; 183-192
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation Studies in Silicon Implanted with High-Energy Protons
Autorzy:
Wieteska, K.
Dłużewska, K.
Wierzchowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945258.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 395-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interference Fringes in Synchrotron Section Topography of Implanted Silicon with a Very Large Ion Range
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Dłużewska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964180.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
Silicon crystals implanted with 9 MeV protons to the dose of 5×10$\text{}^{17}$ cm$\text{}^{-2}$ were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The location of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phase Separations in the Narrow-Bandwidth Limit of the Penson-Kolb-Hubbard Model at Zero Temperature
Autorzy:
Kapcia, K.
Czart, W.
Powiązania:
https://bibliotekanauki.pl/articles/1030443.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Fd
71.10.Hf
74.20.-z
74.25.Dw
64.75.Gh
Opis:
In this work we study the ground state of the Penson-Kolb-Hubard model in the limit of narrow-bandwidth. We present phase diagrams of the model for fixed chemical potential and concentration (involving various phase separations). The results are derived within the Hartree-Fock approximation (HFA) in the narrow-bandwidth regime and compared with the exact ones in the atomic limit and the high-dimension regime. Our investigation reveals that the HFA can reconstruct the exact diagram at the ground state when the bandwidth approaches to zero.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Acoustic Pressure Radiated by a Vibrating Circular Plate within the Fraunhofer Zone of the Three-Wall Corner Region
Autorzy:
Szemela, K.
Rdzanek, W.
Powiązania:
https://bibliotekanauki.pl/articles/1490263.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
43.20.Ks
43.20.Rz
43.40.+s
43.20.-f
43.20.+g
Opis:
The Neumann boundary value problem has been solved for the region bounded by the three perfect rigid infinite baffles arranged perpendicularly to one another. The harmonically vibrating clamped circular plate embedded in one of the baffles is the sound source. It has been assumed that the amplitude of the plate's transverse vibrations is small to use the linear Kelvin-Voigt theory. The Green function has been applied to obtain the asymptotic formulae describing the distribution of the acoustic pressure within the Fraunhofer zone. The analysis of sound radiation has been performed for some selected surface excitations and for some different plate's locations. The acoustic pressure distribution has been examined including the acoustic attenuation and the internal attenuation of the plate's material.
Źródło:
Acta Physica Polonica A; 2012, 121, 1A; A-100-A-109
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cole-Cole Plots for Linear and Nonlinear Dielectric Relaxation in Solutions of Rigid Highly Dipolar Symmetric-Top Molecules in Spherical Solvents
Autorzy:
Alexiewicz, W.
Grygiel, K.
Powiązania:
https://bibliotekanauki.pl/articles/1812032.pdf
Data publikacji:
2008-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.40.Jc
77.22.-d
77.22.Gm
Opis:
The graphical analysis of the influence of the rotational diffusion tensor anisotropy and the orientation of the permanent dipole moment on the linear and nonlinear dielectric relaxation is shown. The solution of Smoluchowski-Debye rotational diffusion equation for rigid, and noninteracting polar, symmetric-top molecules, in the "weak molecular reorientation approximation", was used. In order to highlight the influence of the symmetric shape of molecule, in comparison with classical, spherical-top Smoluchowski rotational diffusion, we present sets of Argand-type plots and three-dimensional Cole-Cole diagrams for linear and nonlinear electric susceptibilities. The results indicate that, in describing the nonlinear dielectric relaxation, the simplest spherical-top rotational diffusion model may be a sufficient approximation in some special cases only.
Źródło:
Acta Physica Polonica A; 2008, 114, 4; 687-698
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies
Autorzy:
Mazur, K.
Wierzchowski, W.
Wieteska, K.
Hofman, W.
Sakowska, H.
Kościewicz, K.
Strupiński, W.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1538812.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cm
61.72.Ff
61.72.up
Opis:
X-ray reflectometric and diffraction topographic methods were applied for examination of 4H and 6H silicon carbide substrates finished with various regimes, as well as, silicon carbide epitaxial layers. The investigations indicated a very good quality of the substrate surfaces finished with the process established at the Institute of Electronic Materials Technology, which provided the surface roughness σ = 0.55 ± 0.07 nm for 4H-SiC wafers. These values were better than those of substrate wafers offered by many commercial producers. The surface roughness was decreased during the initial high temperature etching to σ = 0.22 ± 0.07 nm. A relatively good structural quality was confirmed in the case of 4H epitaxial wafers deposited on the substrates prepared from the crystals manufactured at the IEMT, with the 8° off-cut from the main (001) plane.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 272-276
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On Temperature Dependence of Domain Structure in Cobalt
Autorzy:
Szmaja, W.
Polański, K.
Dolecki, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964829.pdf
Data publikacji:
1997-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.60.-d
64.70.-p
Opis:
The type-I magnetic contrast in a scanning electron microscope is used to study the domain behaviour on the basal planes of cobalt monocrystals of different thicknesses during a heating cycle. Digital image processing is applied to the original scanning electron microscope images for their restoration, enhancement and analysis. The main reasons for the application of digital image processing are: low level of type-I magnetic contrast, particularly used at the higher temperatures, and the complex character of the magnetic domain structure. The changes in both domain structures and type-I magnetic contrast are due to the strong temperature dependence of magnetocrystalline anisotropy energy for the hcp phase of cobalt, which implies the rotation of magnetic easy axis from the c-axis to the basal plane. The temperature of the magnetic phase transition between an open-flux and a closed-flux domain configuration was found to be dependent on the specimen thickness. The changes in domain structure during the heating cycle were reversible under the condition that the specimen was not carried through the hcp-to-fcc phase transition. Otherwise, they were partially or completely irreversible and were caused by crystal imperfections originating from the transition. The paper shows the great advantage of using digital image processing system for data restoration, enhancement and analysis.
Źródło:
Acta Physica Polonica A; 1997, 92, 2; 469-472
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synchrotron White Beam Topographic Studies of Gallium Arsenide Crystals
Autorzy:
Wierzchowski, W.
Wieteska, K.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1964178.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
A series of samples cut out from different types of gallium arsenide crystals with low dislocation density were studied by means of white beam synchrotron topography. The investigation was performed with transmission and back-reflection projection methods and transmission section method. Some of the topographs in transmission geometry provided a very high sensitivity suitable for revealing small precipitates. The transmission section images significantly differed depending on the wavelength and absorption. In some cases a distinct Pendellösung fringes and fine details of dislocation and precipitates images were observed. It was possible to reproduce the character of these images by means of numerical simulation based on integration of Takagi-Taupin equations. Due to more convenient choice of radiation, synchrotron back-reflection projection topography provided much better visibility of dislocations than analogous methods realized with conventional X-ray sources.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1015-1019
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Problems of Mechanics of Metal Surface Layers
Autorzy:
Gambin, W.
Skalski, K.
Powiązania:
https://bibliotekanauki.pl/articles/1943988.pdf
Data publikacji:
1996-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.10.Cr
68.35.Gy
Opis:
Mechanics of metal surface layers deals with a description of the following objects, quantities and processes: structures and mechanical properties of metal surface layers after a heat, chemical, electro-chemical or physical treatment; evolution of these structures and properties during mechanical treatments; mechanical behaviour of the layers during exploitation processes. This branch of mechanics is based on the results of physical investigations, but it uses a mechanical approach. In the paper, descriptions of metal surface layers within the classical anisotropic plasticity, large strain plasticity, and finally, the crystal and polycrystal plasticity are recalled. Problems connected with a formulation of laws governing a surface layer behaviour are comprehensively discussed.
Źródło:
Acta Physica Polonica A; 1996, 89, 2; 145-154
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Topographic Investigation of Cellular Structure and its Relation to another Defects in Various Types of GaAs Single-Crystals
Autorzy:
Wierzchowski, W.
Mazur, K.
Powiązania:
https://bibliotekanauki.pl/articles/1929756.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
The defect patterns in GaAs crystal grown using liquid encapsulated Czochralski and gradient freeze methods with various types of doping were characterized using complementary X-ray topographic methods. It was found that the cellular structure occurring in the low doped crystal is developed independently from the actual growth surface. The occurrence of the cellular structure is connected with significant lattice deformation, and some results point that significant stress can influence its formation. The high doping prevents formation of the cellular structure, but at higher doping the phenomenon of "cellular growth" can occur due to instabilities of the growth surface. The present results point that defect pattern in GaAs crystals is more affected by the type of doping than by the choice of the growth method.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 789-794
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Size effect in plasmon resonance of metallic nanoparticles: RPA versus COMSOL
Autorzy:
Kluczyk, K.
Jacak, W.
Powiązania:
https://bibliotekanauki.pl/articles/1075371.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
36.40.Gk
73.20.Mf
Opis:
Size effect for plasmon resonance in metallic nanoparticles has been studied by finite element method solution of the Maxwell equations (COMSOL), by the Mie approach and microscopic random phase approximation model. Comparison with Au, Ag nanoparticles experimental data for light extinction in colloidal solutions with different particle sizes is presented for the three types of approach.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-83-A-86
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Andreev Reflection in Transport Through a Quantum Dot Interacting With a Polaron
Autorzy:
Bocian, K.
Rudziński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1202075.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Mk
73.23.Hk
73.63.Kv
74.25.F-
Opis:
Spin-dependent tunneling through a quantum dot coupled to one ferromagnetic and one superconducting electrodes is studied theoretically in the Andreev reflection (AR) regime. Spectral functions for the system are calculated in terms of the nonequilibrium Green function technique. Effects due to interplay between the Coulomb correlations on the dot and the local phonon mode in the context of the AR transmission are analyzed.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 374-375
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 257

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