Autor: Sobczak, J. W. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Adsorption of Oxygen on HF-Etched Si(111) Surfaces: XPS Study
Autorzy:: Iwanowski, R. J.
Sobczak, J. W.
Powiązania:: https://bibliotekanauki.pl/articles/1963382.pdf
Data publikacji:: 1997-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.Dp
Opis:: X-ray photoelectron spectroscopy studies of the Si(111) surfaces, after dilute HF etching and methanol rinse, are reported. These included a detailed analysis of the main core-levels (Si 2p, O 1s) and the valence band spectra. The observed asymmetry of the O 1s lines was attributed to two contributing subpeaks: the main (1) and the minor one (2), shifted ≈ 1.5 eV to higher binding energies. Their relative intensity was found to depend on the air exposure time and on the take-off angle. The peaks were assigned to two different positions of surface oxygen: (1) O chemisorbed with methoxy group, (2) bridging O atom. The valence band X-ray photoelectron spectroscopy spectra reveal the influence of surface states induced by the "chemisorbed O"-Si bond.
Źródło:: Acta Physica Polonica A; 1997, 91, 4; 793-796
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Photoemission and Inverse Photoemission Studies of SiO$\text{}_{2}$
Autorzy:: Sobczak, A.
Nietubyć, R.
Sobczak, J. W.
Powiązania:: https://bibliotekanauki.pl/articles/1931764.pdf
Data publikacji:: 1994-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.20.Kz
71.25.Tn
79.60.Ht
Opis:: Occupied and unoccupied electron states of amorphous silicon dioxide film supported on Si crystal are studied by using X-ray photoemission and, for the first time, X-ray inverse photoemission (X-ray bremsstrahlung isochromat method). A special care was undertaken to minimize decomposition of silicon oxide during X-ray bremsstrahlung measurements. The experimental spectra are compared with theoretical band structure calculations for amorphous SiO$\text{}_{2}$ from the literature and good overall agreement is found.
Źródło:: Acta Physica Polonica A; 1994, 86, 5; 837-843
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: X-Ray Photoelectron Study of Yb-Doped InP
Autorzy:: Iwanowski, R. J.
Sobczak, J. W.
Kaliński, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1963388.pdf
Data publikacji:: 1997-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.Bm
71.55.Eq
Opis:: X-ray photoelectron spectra of core levels are reported for InP:Yb. Crystalline InP, doped with Yb to a level of 0.5 at.%, was grown by the synthesized solute diffusion method. An analysis of the core-level spectra of the constituent components, i.e. In 3d$\text{}_{5}\text{}_{/}\text{}_{2}$ and P 2p, revealed a minor influence of the surface oxide species, mainly in the phosphate-like form. The spectrum of the Yb 4d core level was also recorded. The energy of the Yb 4d$\text{}_{3}\text{}_{/}\text{}_{2}$ peak was found identical to that in Yb metal, whereas the 4d$\text{}_{5}\text{}_{/}\text{}_{2}$ peak was found to be shifted to higher binding energies. This effect was found comparable to the case of advanced oxidation of Yb thus confirming its high reactivity, even as a bulk dopant. The data give also a rare experimental example of detection of bulk dopant atoms in a semiconductor matrix by X-ray photoelectron spectroscopy at the limit of detectability.
Źródło:: Acta Physica Polonica A; 1997, 91, 4; 809-813
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: X-Ray Photoelectron Spectroscopy and Optical Reflectivity Studies of Si Surfaces Prepared by Chemical Etching
Autorzy:: Iwanowski, R. J.
Sobczak, J. W.
Kowalski, B. J.
Powiązania:: https://bibliotekanauki.pl/articles/1931749.pdf
Data publikacji:: 1994-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.Bm
78.40.Fy
Opis:: Complementary X-ray photoelectron spectroscopy and optical reflectivity studies of crystalline Si(111) surfaces prepared by two different wet chemical etching processes were performed. These included aqueous HF solution etch or diluted CP-4 bath. Optical reflectivity spectra of Si surfaces, measured in the range 3.7-11 eV, were found strongly dependent on the applied etching process. Analysis of the core level X-ray photoelectron spectroscopy data has shown similarity of the surface structure, irrespectively of the etching procedure. Finally, comparison of optical reflectivity and valence band X-ray photoelectron spectra revealed a qualitative correlation between them indicating dominant influence of the bulk (here, the subsurface region containing polishing-induced defects) in the case studied. This paper is the first one which presents correlations between optical reflectivity and X-ray photoelectron spectroscopy data for Si and thus illustrates a bulk sensitivity of both techniques considered.
Źródło:: Acta Physica Polonica A; 1994, 86, 5; 825-830
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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