Autor: Sobańska, K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE
Autorzy:: Wierzbicka, A.
Żytkiewicz, Z.
Sobańska, M.
Kłosek, K.
Łusakowska, E.
Powiązania:: https://bibliotekanauki.pl/articles/1431598.pdf
Data publikacji:: 2012-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
61.05.cm
81.15.Hi
68.55.-a
Opis:: Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 μm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate significantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate.
Źródło:: Acta Physica Polonica A; 2012, 121, 4; 899-902
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Photoluminescence Dynamics of GaN/Si Nanowires
Autorzy:: Korona, K.
Zytkiewicz, Z.
Perkowska, P.
Borysiuk, J.
Binder, J.
Sobanska, M.
Klosek, K.
Powiązania:: https://bibliotekanauki.pl/articles/1403621.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
73.22.-f
78.47.jd
Opis:: In this work we present analysis of carriers dynamics in samples of GaN nanowires grown on silicon. The samples exhibit bright luminescence of bulk donor-bound excitons at 3.472 eV, surface defect-bound excitons at 3.450 eV (SDX) and a broad (0.05 eV) band centered at 3.47 eV caused probably by single free exciton and bi-exciton recombination. The SDX emission has long lifetime τ = 0.6 ns at 4 K and can be observed up to 50 K. At higher temperatures luminescence is dominated by free excitons. The broad excitonic band is best visible under high excitation, and reveals fast, non-exponential dynamics. We present mathematical model assuming exciton-exciton interaction leading to the Auger processes. The model includes $n^2$ (Langevin) term and describes well the non-exponential dynamics of the excitonic band.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1001-1003
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates
Autorzy:: Zytkiewicz, Z.
Dluzewski, P.
Borysiuk, J.
Sobanska, M.
Klosek, K.
Witkowski, B.
Setkiewicz, M.
Pustelny, T.
Powiązania:: https://bibliotekanauki.pl/articles/1492480.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.15.Hi
81.05.Dz
61.46.Km
Opis:: We report on growth of GaN nanocolumns by plasma assisted MBE on (111) silicon substrates and on their characterization. The nanocolumns nucleate on the substrate spontaneously without use of any catalyst, probably by the Volmer-Weber mechanism. Transmission electron microscopy analysis shows high crystalline quality of GaN nanocolumns and their good alignment with the c-axis being perpendicular to the substrate. Preliminary results on use of GaN nanocolumns in gas sensor devices are presented.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-015-A-016
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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