- Tytuł:
- Study of the Defect Structure of $Hg_{1-x}Cd_{x}Te$ Films by Ion Milling
- Autorzy:
-
Pociask, M.
Izhnin, I.
Ilyina, E.
Dvoretsky, S.
Mikhailov, N.
Sidorov, Yu.
Varavin, V.
Mynbaev, K. - Powiązania:
- https://bibliotekanauki.pl/articles/1811974.pdf
- Data publikacji:
- 2008-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.61.Ga
61.80.Jh
66.30.Lw - Opis:
- A study of the defect structure of heteroepitaxially grown $Hg_{1-x}Cd_{x}Te$ (MCT) films was performed with the use of ion milling. Undoped and in situ As- (acceptor) or In- (donor) doped films with x=0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ $10^{17} cm^{-3}$, formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of $10^{15} cm^{-3}$, which is typical of high-quality MCT.
- Źródło:
-
Acta Physica Polonica A; 2008, 114, 5; 1293-1301
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł