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Wyszukujesz frazę "Semenov, S." wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
Effects of Photoluminescence Polarization in Semiconductor Quantum Well Subjected to In-Plane Magnetic Field
Autorzy:
Semenov, Yu. G.
Ryabchenko, S. M.
Powiązania:
https://bibliotekanauki.pl/articles/2038089.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.-n
78.20.Ls
Opis:
Strong optical polarization anisotropy observed previously in the exciton photoluminescence from [100]-oriented quantum wells subjected to the in-plane magnetic field is described within microscopic approach. Developed theory involves two sources of optical polarization anisotropy. The first of them is due to correlation between ψ-functions phases of electron and heavy hole which arise owing to electron Zeeman spin splitting and joint manifestation of low-symmetrical and Zeeman interactions of heavy holes in an in-plane magnetic field. Other optical polarization anisotropy source stems from the admixture of light-holes states to heavy-holes ones by low-symmetry interactions. The heavy hole splitting caused by these interactions separately and the effects of their interference are analyzed. The domination of C$\text{}_{2v}$ low-symmetry interaction connected with quantum wells interfaces and/or in-plane deformations takes place in relatively low magnetic field. The directions of this perturbation determine main directions of the π-periodical optical polarization anisotropy. The cubic anisotropy of valence band can add the π/2-periodical contribution to the optical polarization anisotropy. In the case of quantum wells with semimagnetic barriers the Zeeman term contribution can reach value, which dominates the C$\text{}_{2v}$ ones, and crossover to polarization connected with magnetic field direction may be observed in low temperature.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 537-545
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Absorption in Periodic InN:In Structures
Autorzy:
Plotnikov, D. S.
Shubina, T. V.
Jmerik, V. N.
Semenov, A. N.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2047375.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
71.45.Gm
Opis:
Optical absorption measurements were exploited to study periodic InN:In structures grown by plasma-assisted molecular beam epitaxy with the thickness of the metallic inclusions varied from 2 to 48 monolayers. We demonstrate that the observed higher-energy shift of an effective absorption edge may be due to In depletion of the InN matrix via the coalescence of In into large clusters, accompanied by the respective higher-energy shift of the Mie resonance. The relevant uncertainty in the optical gap of InN is discussed.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 191-196
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Diluted Magnetic Semiconductor Investigations in Ukraine. Nature of Some Additional Lines in QW Optical Spectra
Autorzy:
Ryabchenko, S. M.
Abramishvili, V. G.
Komarov, A. V.
Semenov, Yu. G.
Kyrychenko, F. V.
Dubowski, J. J.
Powiązania:
https://bibliotekanauki.pl/articles/1968990.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
Opis:
The general review of the history and present-day situation of diluted magnetic semiconductor investigation in Ukraine is given by S. Ryabchenko. Some noteworthy results of diluted magnetic semiconductor investigation obtained in Ukraine are pointed out. The main features of the present day situation are mentioned also. As an example of last diluted magnetic semiconductor investigations, the new result obtained by Abramishvili, Komarov, Ryabchenko, Semenov, Kyrychenko and Dubowski for Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te/CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te quantum well structures grown by laser ablation method are presented. A weak additional line was observed in the reflectivity spectra of a 27 Å wide quantum well with x= 0.11 in the barrier. Such additional line has not been observed in spectra of similar molecular beam epitaxy grown structures. Based on the theoretical computations of the energies and the relation of intensities of the main and additional lines we conclude that this line might be associated with hh2 → e1 transitions, which ceases to be forbidden in the presence of technologically caused asymmetry of quantum well potential profile.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 165-176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix
Autorzy:
Mukhin, M.
Terent'ev, Ya.
Golub, L.
Nestoklon, M.
Meltser, B.
Semenov, A.
Solov'ev, V.
Sitnikova, A.
Toropov, A.
Ivanov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1492858.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.75.-c
71.70.Ej
78.55.Cr
78.67.Hc
78.20.Ls
75.40.Mg
Opis:
Magneto-optical properties of type II heterostructures with InSb/InAs quantum dots has been studied at external magnetic field applied in the Faraday geometry. The emission polarization degree can be changed in the range from 100% σ-minus to 10% σ-plus due to excitation intensity and temperature variation. The detailed calculation of the band structure within a tight-binding approximation is presented. The simulation of the experimental data reveals that the oscillator strength of the optical transitions involving electrons with the spin oriented along and opposite to the magnetic field vector differs by approximately 1.8 times in the heterostructures under study.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 868-869
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy
Autorzy:
Semenov, A. N.
Solov'ev, V. A.
Meltser, B. Ya.
Lyublinskaya, O. G.
Terent'ev, Ya. V.
Sitnikova, A. A.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2044535.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
81.07.Ta
81.15.Hi
81.16.Dn
Opis:
We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4μm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5μm has been observed at 80 K.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 859-865
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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