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    Wyświetlanie 1-7 z 7
    Tytuł:
    Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method
    Autorzy:
    Dussan, A.
    Schmidt, J.
    Koropecki, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1207505.pdf
    Data publikacji:
    2014-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.61.Ga
    61.72.uf
    Opis:
    In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited by plasma-enhanced chemical vapor deposition, using silane $(SiH_4)$ diluted in hydrogen, and diborane $(B_2H_6)$ as a dopant gas. The concentration of $B_2H_6$ in $SiH_4$ was varied in the range of 0-100 ppm. The density of states was obtained from the thermally stimulated conductivity technique and compared with results obtained by the modulated photoconductivity methods. To explain the poor agreement between the density of states obtained from the thermally stimulated conductivity and the other methods, it is shown by means of numerical simulations that the density of states is very sensitive to experimental errors introduced in the calculation of the $μ_{n}τ_{n}$ product (mobility of electron × lifetime of the electron). The thermally stimulated conductivity method is applied here for the first time to calculate the density of defect states in the forbidden band of μc-Si:H samples.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 2; 174-176
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    On the Symmetry of the Sulfur Pair-Related Defect in Silicon
    Autorzy:
    Bennebroek, M. T.
    Zakrzewski, A.
    Frens, A. M.
    Schmidt, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929739.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    76.30.Lh
    71.55.Ht
    Opis:
    A sulfur-related-pair defect in silicon has been studied with optically detected magnetic resonance spectroscopy. Measurement of the angular dependence of the optically detected magnetic resonance signals supplemented by the analysis of the spectrum "quality" yield to the conclusion that the point group symmetry of the defect studied is C$\text{}_{1h}$.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 725-728
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices
    Autorzy:
    Subačius, L.
    Venckevičius, R.
    Kašalynas, I.
    Seliuta, D.
    Valušis, G.
    Schmidt, J.
    Lisauskas, A.
    Roskos, H.
    Alekseev, K.
    Köhler, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505524.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Cd
    06.60.Jn
    73.90.+f
    Opis:
    Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/$Al_{0.3}Ga_{0.7}As$ superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 167-169
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Determination of Exchange and Rotatable Anisotropies in Co₂FeSi/IrMn Exchange Coupled Structures using Broadband Ferromagnetic Resonance
    Autorzy:
    Głowiński, H.
    Schmidt, M.
    Krysztofik, A.
    Gościańska, I.
    Dubowik, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1386989.pdf
    Data publikacji:
    2015-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Gw
    75.30.Et
    75.60.Jk
    Opis:
    We determined exchange $H_{ex}$ and rotatable $H_{rot}$ anisotropy fields of multilayers that comprise 10 nm Co₂FeSi (CFS) layers exchange coupled to 20 nm IrMn layers by using ferromagnetic resonance with a vector network analyzer (VNA-FMR). The multilayer structures consist of IrMn/bottom (b)-CFS/IrMn/middle (m)-CFS/IrMn/top (t)-CFS/IrMn layers so that each CFS layer is surrounded by a pair of IrMn layers. In the structures, the exchange bias field propagates in such a way that $H_{ex}^{t}$ > $H_{ex}^{m}$ > $H_{ex}^{b}$ for the top, middle, and bottom layer, respectively. FMR response measured along the exchange bias (EB) axis consist of only two absorptions related to the (b+m)- and (t)-CFS layers, respectively. Exchange and rotatable anisotropy determined independently from angular and dispersion measurements of the resonance fields are nearly the same. Rotatable anisotropy field scales with the exchange bias field in these complex structures.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 2; 531-533
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High-Quality Ni-Fe/Cu Multilayer Films with Antiferromagnetic Coupling
    Autorzy:
    Stobiecki, F.
    Dubowik, J.
    Luciński, T.
    Szymański, B.
    Rohrmann, H.
    Röll, K.
    Schmidt, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1955455.pdf
    Data publikacji:
    1997-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Tt
    76.50.+g
    Opis:
    We report structural and magnetic properties of Ni$\text{}_{83}$Fe$\text{}_{17}$/Cu multilayer films with various buffer layer and sublayer thicknesses of copper d$\text{}_{Cu}$ and Permalloy d$\text{}_{Py}$ deposited by face-to-face sputtering. The following features prove a good quality of our films: a well-layered structure, complete antiferromagnetic coupling with a low coupling strength (2×10$\text{}^{-5}$ J/m$\text{}^{2}$ for d$\text{}_{Cu}$=1 nm and 10$\text{}^{-6}$ J/m$\text{}^{^2}$ for d$\text{}_{Cu}$=2.1 nm) and a low coercive field which make them attractive for possible applications as giant magnetoresistance sensors.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 2; 277-280
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Domains Stimulated Magnetostatic Coupling in NiFe/Au/Co/Au Multilayers Investigated by Complementary Methods
    Autorzy:
    Stobiecki, F.
    Urbaniak, M.
    Szymański, B.
    Kuświk, P.
    Schmidt, M.
    Aleksiejew, J.
    Weis, T.
    Engel, D.
    Lengemann, D.
    Ehresmann, A.
    Kopcewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810577.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.70.-i
    75.30.Gw
    75.60.-d
    Opis:
    The magnetic structure of $Ni_{80}Fe_{20}$/Au/Co/Au multilayers characterized by easy-plane and easy-axis perpendicular to the sample plane anisotropies for NiFe and Co, respectively, is strongly modified by magnetostatic coupling resulting from stray fields of stripe domains in the Co layers. Using complementary methods it will be shown that the magnetostatic coupling increases with decreasing Au spacer thickness, with the weakening of the easy plane anisotropy of the NiFe layers and with increasing thickness of the Co layers.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 345-347
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanostructural Superconducting Materials for Fault Current Limiters and Cryogenic Electrical Machines
    Autorzy:
    Prikhna, T.
    Gawalek, W.
    Savchuk, Ya.
    Sergienko, N.
    Moshchil, V.
    Sokolovsky, V.
    Vajda, J.
    Tkach, V.
    Karau, F.
    Weber, H.
    Eisterer, M.
    Joulain, A.
    Rabier, J.
    Chaud, X.
    Wendt, M.
    Dellith, J.
    Danilenko, N.
    Habisreuther, T.
    Dub, S.
    Meerovich, V.
    Litzkendorf, D.
    Nagorny, P.
    Kovalev, L.
    Schmidt, Ch.
    Melnikov, V.
    Shapovalov, A.
    Kozyrev, A.
    Sverdun, V.
    Kosa, J.
    Vlasenko, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1549637.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.25.Sv
    74.81.Bd
    74.70.Ad
    74.78.Na
    74.62.Fj
    74.25.Ld
    74.62.Dh
    74.25.Ha
    Opis:
    Materials of the Y-Ba-Cu-O (melt-textured $YBa_{2}Cu_{3}O_{7-δ}$-based materials or MT-YBCO) and Mg-B-O ($MgB_{2}$-based materials) systems with high superconducting performance, which can be attained due to the formation of regularly distributed nanostructural defects and inhomogeneities in their structure can be effectively used in cryogenic technique, in particular in fault current limiters and electrical machines (electromotors, generators, pumps for liquid gases, etc.). The developed processes of high-temperature (900-800°C) oxygenation under elevated pressure (16 MPa) of MT-YBCO and high-pressure (2 GPa) synthesis of $MgB_{2}$-based materials allowed us to attain high superconductive (critical current densities, upper critical fields, fields of irreversibility, trapped magnetic fields) and mechanical (hardness, fracture toughness, Young modulus) characteristics. It has been shown that the effect of materials properties improvement in the case of MT-YBCO was attained due to the formation of high twin density (20-22 $μm^{-1}$), prevention of macrocracking and reduction (by a factor of 4.5) of microcrack density, and in the case of $MgB_{2}$-based materials due to the formation of oxygen-enriched as compared to the matrix phase fine-dispersed Mg-B-O inhomogeneities as well as inclusions of higher borides with near-$MgB_{12}$ stoichiometry in the Mg-B-O matrix (with 15-37 nm average grain sizes). The possibility is shown to obtain the rather high $T_{c}$ (37 K) and critical current densities in materials with $MgB_{12}$ matrix (with 95% of shielding fraction as calculated from the resistant curve).
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 7-14
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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