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    Wyświetlanie 1-6 z 6
    Tytuł:
    Magnetic Anisotropy of NiMn/Ni and NiMn/Cu/Ni Thin Films
    Autorzy:
    Ogawa, T.
    Sato, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2013074.pdf
    Data publikacji:
    2000-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Gw
    75.50.Lk
    75.70.Ak
    Opis:
    The magnetic anisotropy of reentrant spin glass NiMn thin film, in the vicinity of the ferromagnetic Ni film, is investigated using NiMn/Ni, Cu/Ni/Cu (t=10 Å and 500 Å)/NiMn and NiMn/Ni/Cu (t=10 ÷ 5000 Å)/Ni films. The unidirectional anisotropy field of NiMn layer in NiMn/Ni film is smaller than that of bulk NiMn. In Cu/Ni/Cu (t=10 Å and 500 Å)/NiMn film, the unidirectional anisotropy field is almost independent of the Cu spacer thickness. These results can be explained in terms of magnetic coupling between the magnetic layers in addition to the film structure of NiMn layer.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 3; 491-494
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Image Depth Profiling AES
    Autorzy:
    Sekine, T.
    Sato, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1892328.pdf
    Data publikacji:
    1992-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Dv
    Opis:
    Image depth profiling AES incorporating an image processing technique has been developed. This method reconstructs a cross-sectional image from acquired 2-dimensional and/or 3-dimensional data. A binary image produced from a secondary electron image through image processing can be used to cut the area of interest for selected area analysis. In a failure analysis of a relay contact, we found by cross-sectional image observation that Fe and Ni permeate from pin holes in an Au layer covering a Fe-Ni alloy. A VTR head made of a polycrystalline ferrite core covered with a Sendust (Si-Al-Fe alloy) layer at the gap has been analyzed. Depth distributions of Al, 0, and Fe on different grains, and Al and O distributions near grain boundaries have been successfully reassembled from the 3-dimensional data.
    Źródło:
    Acta Physica Polonica A; 1992, 81, 1; 145-157
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Concentration Dependence of Photo-Induced Magnetization in Diluted Magnetic Semiconductor Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
    Autorzy:
    Yamaguchi, Y.
    Kawai, H.
    Sato, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1956517.pdf
    Data publikacji:
    1997-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Lk
    75.50.Pp
    Opis:
    The photo-induced decrease in magnetization ΔM$\text{}_{photo}$ was observed in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te (0.25 < x < 0.42) under unpolarized light illumination whose photon energy is smaller than the band gap of the sample. The photo-induced magnetization decreases with increasing Mn content through Mn$\text{}^{2+}$-Mn$\text{}^{2+}$ antiferromagnetic interaction, which supports our idea for origin of it based on the flipping of Mn spins in the bound magnetic polarons accompanied by the spin-flip Raman scattering.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 2; 479-482
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Tsai-Type Quasicrystal and Its Approximant in Au-Al-Tm Alloys
    Autorzy:
    Tanaka, K.
    Tanaka, Y.
    Ishimasa, T.
    Nakayama, M.
    Matsukawa, S.
    Deguchi, K.
    Sato, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1373678.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.66.Dk
    61.44.Br
    Opis:
    A P-type icosahedral quasicrystal with a six-dimensional lattice parameter $a_{6D}$ = 7.411 Å is formed as an equilibrium phase in Au-Al-Tm alloy, of which composition was analyzed to be $Au_{46}Al_{38}Tm_{16}$ by electron probe microanalysis. This quasicrystal is observed as a predominant phase in both as-cast and $Au_{49}Al_{34}Tm_{17}$ alloys annealed at 910°C, and as one of main phases in the alloy slowly cooled from 1020°C. A 1/1 approximant, $Au_{48}Al_{38}Tm_{14}$, is also formed near the composition of the quasicrystal. This is a body-centered cubic structure (space group: Im3̅) with a lattice parameter a = 14.458 Å that is an isostructure to the recently reported 1/1 Tsai-type approximant in Au-Al-Yb. This approximant is characterized by disorderly arranged four Au-Al atoms centered at the Tsai-type cluster, presence of atoms at 8c site, and chemical ordering of Au and Al at sites forming a partial triacontahedron.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 603-607
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transport Properties of the Au-Al-Yb Quasicrystal and Approximant under Hydrostatic Pressure
    Autorzy:
    Matsukawa, S.
    Tanaka, K.
    Nakayama, M.
    Kunikata, S.
    Deguchi, K.
    Imura, K.
    Ishimasa, T.
    Sato, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1373322.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.27.+a
    72.15.Eb
    75.50.Kj
    Opis:
    The mixed-valence Au-Al-Yb quasicrystal exhibits unusual quantum criticality. Its crystalline approximant behaves like a conventional heavy fermion metal. Due to these novel features, they have attracted much attention recently. To examine the sample dependence of this new type of materials, we have prepared several samples and measured the electrical resistivity both at ambient and high pressures as well as the magnetic susceptibility at ambient pressure. The residual resistivity ratio of the quasicrystals is almost sample independent while the power law exponent n of the electrical resistivity varies from sample to sample. The effective magnetic moment $p_{eff}$ of the quasicrystals is also sample dependent, ranging from about 3.4 to 3.9 $μ_{B}$/Yb, and these values are all smaller than the free $Yb^{3+}$ ion value, confirming the mixed-valence nature. Although the magnitude of n and $p_{eff}$ is sample-dependent, the principal feature of the mixed-valence is confirmed in all the samples studied thus far. A combination of these results indicates correlation between n and $p_{eff}$, suggesting that the 4f electrons may contribute to a scattering mechanism of the conduction electrons. External pressure increases the magnitude of the electrical resistivity and decreases the index n of both the quasicrystal and the approximant. Up to the highest pressure measured in the present study no experimental evidence for a phase transition was found.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 527-530
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method
    Autorzy:
    Ishikawa, Y.
    Yao, Y.
    Sato, K.
    Sugawara, Y.
    Danno, K.
    Suzuki, H.
    Bessho, T.
    Kawai, Y.
    Shibata, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492539.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    81.65.Cf
    68.37.Lp
    Opis:
    Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-025-A-027
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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