Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Sato, K." wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
Positron Annihilation in Carbon Nanotubes Studied by Coincidence Doppler Broadening Spectroscopy
Autorzy:
Murakami, H.
Sato, K.
Kanazawa, I.
Sano, M.
Powiązania:
https://bibliotekanauki.pl/articles/1812544.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.Fg
78.70.Bj
36.10.Dr
Opis:
In order to assign the sites of positron annihilation, coincidence Doppler broadening spectra were measured for a highly oriented pyrolytic graphite crystal, graphite powder, multi-walled carbon nanotubes (MNTs) and cup-stacked carbon nanotubes (CNTs). The spectrum for graphite powder normalized to that for highly oriented pyrolytic graphite (HOPG) is almost flat in the momentum region from $7×10^{-3}$ to $13×10^{-3} m_{e}c$, having a ratio close to unity. The flat spectrum demonstrates that positrons injected into graphite powder annihilate in the interlayer spaces of piled graphite sheets, in the same manner as positrons in highly oriented pyrolytic graphite annihilate in the bulk. The coincidence Doppler broadening spectra for MNTs and CNTs are quite different from that for highly oriented pyrolytic graphite, which indicates that positrons injected into MNTs and CYTs annihilate not in the bulk, but on surface. The positron lifetime spectrum for multi-walled carbon nanotubes is analyzed in terms of a single component due to surface-trapped positrons, while that for CNTs is decomposed into three components attributable to para-positronium surface-trapped positrons and ortho-positronium. The difference between the coincidence Doppler broadening spectrum for CNTs and that for MNTs is explained in terms of positron annihilation on zigzag surfaces of CNTs which are composed of both graphite-sheet and graphite-edge planes.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1479-1484
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron and Positronium Annihilation in Polymers Studied by Age-Momentum Correlation Spectroscopy
Autorzy:
Sato, K.
Murakami, H.
Ito, K.
Hirata, K.
Kobayashi, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1812549.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.60.+z
78.70.Bj
82.30.Gg
42.70.jk
Opis:
Positron (e⁺) and positronium (Ps) annihilation processes in polymers are studied by positron age-momentum correlation spectroscopy, which can sensitively probe momentum distributions of e⁺, p-Ps, and o-Ps. For polyether sulfone and ethylene tetrafluoroethylene copolymer belonging to oxygen-containing polymers (O group) and fluorine-containing polymers (F group), respectively, significant effects of positron trapping by polar element are observed. The Doppler profile of o-Ps pick-off annihilation is strongly influenced by F atoms, giving rise to anomalous broadening. The results are discussed together with our previous data of the S-I₃ correlation in order to explore the feasibility of chemical analysis around the free volumes by age-momentum correlation spectroscopy.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1511-1516
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method
Autorzy:
Ishikawa, Y.
Yao, Y.
Sato, K.
Sugawara, Y.
Danno, K.
Suzuki, H.
Bessho, T.
Kawai, Y.
Shibata, N.
Powiązania:
https://bibliotekanauki.pl/articles/1492539.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
81.65.Cf
68.37.Lp
Opis:
Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-025-A-027
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Properties of the Au-Al-Yb Quasicrystal and Approximant under Hydrostatic Pressure
Autorzy:
Matsukawa, S.
Tanaka, K.
Nakayama, M.
Kunikata, S.
Deguchi, K.
Imura, K.
Ishimasa, T.
Sato, N.
Powiązania:
https://bibliotekanauki.pl/articles/1373322.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.27.+a
72.15.Eb
75.50.Kj
Opis:
The mixed-valence Au-Al-Yb quasicrystal exhibits unusual quantum criticality. Its crystalline approximant behaves like a conventional heavy fermion metal. Due to these novel features, they have attracted much attention recently. To examine the sample dependence of this new type of materials, we have prepared several samples and measured the electrical resistivity both at ambient and high pressures as well as the magnetic susceptibility at ambient pressure. The residual resistivity ratio of the quasicrystals is almost sample independent while the power law exponent n of the electrical resistivity varies from sample to sample. The effective magnetic moment $p_{eff}$ of the quasicrystals is also sample dependent, ranging from about 3.4 to 3.9 $μ_{B}$/Yb, and these values are all smaller than the free $Yb^{3+}$ ion value, confirming the mixed-valence nature. Although the magnitude of n and $p_{eff}$ is sample-dependent, the principal feature of the mixed-valence is confirmed in all the samples studied thus far. A combination of these results indicates correlation between n and $p_{eff}$, suggesting that the 4f electrons may contribute to a scattering mechanism of the conduction electrons. External pressure increases the magnitude of the electrical resistivity and decreases the index n of both the quasicrystal and the approximant. Up to the highest pressure measured in the present study no experimental evidence for a phase transition was found.
Źródło:
Acta Physica Polonica A; 2014, 126, 2; 527-530
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tsai-Type Quasicrystal and Its Approximant in Au-Al-Tm Alloys
Autorzy:
Tanaka, K.
Tanaka, Y.
Ishimasa, T.
Nakayama, M.
Matsukawa, S.
Deguchi, K.
Sato, N.
Powiązania:
https://bibliotekanauki.pl/articles/1373678.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.Dk
61.44.Br
Opis:
A P-type icosahedral quasicrystal with a six-dimensional lattice parameter $a_{6D}$ = 7.411 Å is formed as an equilibrium phase in Au-Al-Tm alloy, of which composition was analyzed to be $Au_{46}Al_{38}Tm_{16}$ by electron probe microanalysis. This quasicrystal is observed as a predominant phase in both as-cast and $Au_{49}Al_{34}Tm_{17}$ alloys annealed at 910°C, and as one of main phases in the alloy slowly cooled from 1020°C. A 1/1 approximant, $Au_{48}Al_{38}Tm_{14}$, is also formed near the composition of the quasicrystal. This is a body-centered cubic structure (space group: Im3̅) with a lattice parameter a = 14.458 Å that is an isostructure to the recently reported 1/1 Tsai-type approximant in Au-Al-Yb. This approximant is characterized by disorderly arranged four Au-Al atoms centered at the Tsai-type cluster, presence of atoms at 8c site, and chemical ordering of Au and Al at sites forming a partial triacontahedron.
Źródło:
Acta Physica Polonica A; 2014, 126, 2; 603-607
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies