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Wyświetlanie 1-7 z 7
Tytuł:
Theoretical Foundation for the Hume-Rothery Electron Concentration Rule for Structurally Complex Alloys
Autorzy:
Mizutani, U.
Sato, H.
Inukai, M.
Zijlstra, E.
Powiązania:
https://bibliotekanauki.pl/articles/1382955.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Be
71.20.Lp
71.15.Mb
Opis:
An electron concentration parameter, expressed as the number of itinerant electrons per number of atoms N in a structural unit cell of an alloy, e/uc, is a useful parameter that can be used in interpreting the origin of a band structure pseudogap often evident at the Fermi level for structurally complex metallic alloy phases. It can be expressed in terms of the interference condition e/uc=$π/3[|G|_{c}^2]^{3/2}$, where $|G|_{c}^2$ is the square of the critical reciprocal lattice vector associated with the specific set of lattice planes interfering with electrons at the Fermi level. This parameter is similar to the well-known Hume-Rothery electron concentration parameter e/a, which represents the number of electrons per atom and is linked with e/uc through the relation e/uc = N(e/a). We have demonstrated that certain complex metallic alloy structures appear to be stable at or near certain values of e/a. We show that the e/a=1.60 rule holds for the sub-group of gamma-brasses with space group I4̅3m and Pearson symbol cI52, the e/a=4.34 rule for skutterudite compounds with Im3̅ and cI32, the e/a=2.74 rule for $Al_6TM$ (TM = Mn, Tc, Re, Fe, and Ru) compounds with Cmcm and oC28, the e/a=1.62 rule for the sub-group of the Heusler compounds with Fm3̅m and cF16, and the e/a=2.09 rule for the sub-group of Zintl compounds $MX_1$ (M = Li and Na, $X_1$ = Al, Ga, In, and Tl) with Fd3̅m and cF32. The e/a rule holds in sub-groups of isostructural compounds, regardless of the degree of orbital hybridizations and the polarity involved.
Źródło:
Acta Physica Polonica A; 2014, 126, 2; 531-534
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fermi Surface-Brillouin Zone Interactions in 2/1-2/1-2/1 Bergman-Type Approximant $Na_{27}Au_{27}Ga_{31}$
Autorzy:
Mizutani, U.
Sato, H.
Inukai, M.
Zijlstra, E.
Lin, Q.
Corbett, J.
Miller, G.
Powiązania:
https://bibliotekanauki.pl/articles/1373341.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.23.Ft
71.20.Dg
71.15.Mb
Opis:
The X-ray diffraction studies on a newly synthesized $Na_{26}Au_{25}Ga_{29}$ single crystal revealed the formation of a single phase 2/1-2/1-2/1 Bergman-type approximant and the presence of Au/Ga mixed occupancies in its unit cell containing 680 atoms. The structure model of the 2/1-2/1-2/1 approximant with composition $Na_{27}Au_{27}Ga_{31}$ was constructed by eliminating the chemical disorder with a minimum sacrifice of composition displacement. The full potential linearized augmented plane wave electronic structure calculations with subsequent full potential linearized augmented plane wave-Fourier analysis were performed for the 2/1-2/1-2/1 approximant $Na_{27}Au_{27}Ga_{31}$ with space group Pa3̅. The square of the Fermi diameter $(2k_{F})^2$, electrons per atom ratio e/a and the critical reciprocal lattice vector $|G|^2$ are determined. A shallow pseudogap at the Fermi level was interpreted as originating from interference of electrons having $(2k_{F})^2$=109.2±1.0 with sets of lattice planes with $|G|^2$'s centered at 108. The effective e/a value for the compound is found to be 1.76 in good agreement with 1.73 derived from a composition average of $(e/a)_{Na}$=1.0, $(e/a)_{Au}$=1.0 and $(e/a)_{Ga}$=3.0.
Źródło:
Acta Physica Polonica A; 2014, 126, 2; 535-538
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Concentration Dependence of Photo-Induced Magnetization in Diluted Magnetic Semiconductor Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:
Yamaguchi, Y.
Kawai, H.
Sato, T.
Powiązania:
https://bibliotekanauki.pl/articles/1956517.pdf
Data publikacji:
1997-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Lk
75.50.Pp
Opis:
The photo-induced decrease in magnetization ΔM$\text{}_{photo}$ was observed in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te (0.25 < x < 0.42) under unpolarized light illumination whose photon energy is smaller than the band gap of the sample. The photo-induced magnetization decreases with increasing Mn content through Mn$\text{}^{2+}$-Mn$\text{}^{2+}$ antiferromagnetic interaction, which supports our idea for origin of it based on the flipping of Mn spins in the bound magnetic polarons accompanied by the spin-flip Raman scattering.
Źródło:
Acta Physica Polonica A; 1997, 91, 2; 479-482
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron Annihilation in Carbon Nanotubes Studied by Coincidence Doppler Broadening Spectroscopy
Autorzy:
Murakami, H.
Sato, K.
Kanazawa, I.
Sano, M.
Powiązania:
https://bibliotekanauki.pl/articles/1812544.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.Fg
78.70.Bj
36.10.Dr
Opis:
In order to assign the sites of positron annihilation, coincidence Doppler broadening spectra were measured for a highly oriented pyrolytic graphite crystal, graphite powder, multi-walled carbon nanotubes (MNTs) and cup-stacked carbon nanotubes (CNTs). The spectrum for graphite powder normalized to that for highly oriented pyrolytic graphite (HOPG) is almost flat in the momentum region from $7×10^{-3}$ to $13×10^{-3} m_{e}c$, having a ratio close to unity. The flat spectrum demonstrates that positrons injected into graphite powder annihilate in the interlayer spaces of piled graphite sheets, in the same manner as positrons in highly oriented pyrolytic graphite annihilate in the bulk. The coincidence Doppler broadening spectra for MNTs and CNTs are quite different from that for highly oriented pyrolytic graphite, which indicates that positrons injected into MNTs and CYTs annihilate not in the bulk, but on surface. The positron lifetime spectrum for multi-walled carbon nanotubes is analyzed in terms of a single component due to surface-trapped positrons, while that for CNTs is decomposed into three components attributable to para-positronium surface-trapped positrons and ortho-positronium. The difference between the coincidence Doppler broadening spectrum for CNTs and that for MNTs is explained in terms of positron annihilation on zigzag surfaces of CNTs which are composed of both graphite-sheet and graphite-edge planes.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1479-1484
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron and Positronium Annihilation in Polymers Studied by Age-Momentum Correlation Spectroscopy
Autorzy:
Sato, K.
Murakami, H.
Ito, K.
Hirata, K.
Kobayashi, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1812549.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.60.+z
78.70.Bj
82.30.Gg
42.70.jk
Opis:
Positron (e⁺) and positronium (Ps) annihilation processes in polymers are studied by positron age-momentum correlation spectroscopy, which can sensitively probe momentum distributions of e⁺, p-Ps, and o-Ps. For polyether sulfone and ethylene tetrafluoroethylene copolymer belonging to oxygen-containing polymers (O group) and fluorine-containing polymers (F group), respectively, significant effects of positron trapping by polar element are observed. The Doppler profile of o-Ps pick-off annihilation is strongly influenced by F atoms, giving rise to anomalous broadening. The results are discussed together with our previous data of the S-I₃ correlation in order to explore the feasibility of chemical analysis around the free volumes by age-momentum correlation spectroscopy.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1511-1516
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers
Autorzy:
Kato, G.
Tajima, M.
Okayama, F.
Tokumaru, S.
Sato, R.
Toyota, H.
Ogura, A.
Powiązania:
https://bibliotekanauki.pl/articles/1382111.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Ap
61.72.Qq
82.80.Rt
88.40.jj
Opis:
We have investigated the correlation between deep-level photoluminescence and the density of small-angle grain boundaries in multicrystalline Si. A deep-level photoluminescence component around 0.87 eV, which we previously ascribed to oxygen precipitates, became lower and higher in the region with high and low density of small-angle grain boundaries, respectively. This can be explained by the differences in the availability of oxygen atoms around respective small-angle grain boundaries. We performed focused ion beam time-of-flight secondary ion mass spectroscopy on special points emitting extremely strong 0.87 eV emission, and detected a clustered area of $\text{}^16O¯$. This is strong evidence for the idea that the 0.87 eV band is due to oxygen precipitates.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1010-1012
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method
Autorzy:
Ishikawa, Y.
Yao, Y.
Sato, K.
Sugawara, Y.
Danno, K.
Suzuki, H.
Bessho, T.
Kawai, Y.
Shibata, N.
Powiązania:
https://bibliotekanauki.pl/articles/1492539.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
81.65.Cf
68.37.Lp
Opis:
Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-025-A-027
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-7 z 7

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