Autor: Płaczek, Ł. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Diffusion Length Studies in CdMnTe by the Surface Photovoltage Method
Autorzy:: Płaczek-Popko, E.
Szaro, L.
Jędral, L.
Powiązania:: https://bibliotekanauki.pl/articles/1879853.pdf
Data publikacji:: 1991-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.40.+w
Opis:: The surface phototovoltage method provides a nondestructive means of measuring minority carriers diffusion length and is suitable for process control applications and for material acceptance tests. Application of the method in the case of CdMnTe compounds has been studied in the present paper. The optimum measurement conditions have been investigated by studying the dependence of measured diffusion length on the experimental conditions. As the surface photovoltage method requires the exact values of absorption coefficient as a function of wavelength, α = f(λ), the dependence has been determined. The minority carrier diffusion length for the sample investigated has been found to be equal to several tenth of μm.
Źródło:: Acta Physica Polonica A; 1991, 79, 2-3; 187-190
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Capacitance-Voltage Studies of Ti/p-ZnTe Schottky Barrier Structures Containing CdTe Quantum Dots
Autorzy:: Placzek-Popko, E.
Szatkowski, J.
Zielony, E.
Gumienny, Z.
Dobaczewski, L.
Karczewski, G.
Powiązania:: https://bibliotekanauki.pl/articles/2048047.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.61.Ga
73.21.La
73.20.Hb
Opis:: In this paper the electronic states of self-organized CdTe quantum dots embedded in ZnTe matrix are studied by means of capacitance-voltage (C-V) characteristics within the temperature range of 180-300 K. A reference diode of the same layer structure but without quantum dots is studied also for comparison. The C-V characteristics measured for the reference diode exhibit bulk behaviour in contrast to the quantum dots sample for which a characteristic step corresponding to discharging of quantum dots is clearly visible within broad range of temperatures. A quasistatic model based on the self-consistent solution of the Poisson equations is used to simulate the capacitance. By comparison the calculated C-V curve with experimental curve the apparent thermal activation energy for hole emission from the quantum dots to the ZnTe matrix is found to be equal to (0.12 ± 0.03) eV.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 621-623
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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