Autor: Novikov, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Aperiodically Poled Nonlinear Crystals as Sources of Multi-Frequency Laser Radiation
Autorzy:: Novikov, A. A.
Laptev, G. D.
Powiązania:: https://bibliotekanauki.pl/articles/2047885.pdf
Data publikacji:: 2007-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.25.-p
42.15.Eq
42.65.-k
42.79.Nv
Opis:: The new multi-frequency process, which consists of three coupled nonlinear optical interactions: two parametric down-conversions and one up-conversion, in aperiodically poled nonlinear crystal is investigated. The spatial dynamics of wave intensities is studied in detail. The possibility of secondary simplification of coupled equations for correct describing the dynamics of wave interactions is demonstrated. The optimal conditions for parametrical instability of the initial stage of wave interactions are found.
Źródło:: Acta Physica Polonica A; 2007, 112, 5; 1073-1078
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Magnetotransport in Si ⟨Sb⟩ Delta-Layer after Swift Heavy Ion-Induced Modification
Autorzy:: Fedotov, A.
Skuratov, V.
Yurasov, D.
Novikov, A.
Svito, I.
Apel, P.
Zukowski, P.
Fedotova, V.
Powiązania:: https://bibliotekanauki.pl/articles/1030140.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.My
73.20.Fz
73.40.-c
61.80.Jh
Opis:: In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δ-layer in silicon are reported. Temperature and magnetic field dependences of the resistance R(T,B) and the Hall coefficient R_H(T,B) in the temperature range of 2K < T < 300K and B ≤ 8T before and after the 167 MeV Xe⁺²⁶ ion irradiation (ion fluence of 10⁸ cm¯²) were measured. At the temperatures below 50K there is observed the transition from the Arrhenius log R(1/T) to a logarithmic R ≈ -log(T) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths L_{Th}(T) ≈ A × T^{p} (where p and A are dependent on the scattering mechanism) indicated their ≈ 25-30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p = 1, confirming the realization of 2D weak localization regime in the carrier transport.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 229-232
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: The Influence of Deformation and Chemical Composition on Elementary Free Volumes in Glassy Polymers
Autorzy:: Shantarovich, V. P.
Novikov, Yu. A.
Suptel, Z. K.
Oleinik, E. F.
Boyce, M. C.
Powiązania:: https://bibliotekanauki.pl/articles/2008185.pdf
Data publikacji:: 1999-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.70.Bj
Opis:: A relation between positronium annihilation characteristics and concentration of elementary free volumes is considered for the case of positronium formation before its localization. We estimated the diffusion coefficient of nonlocalized positronium (≈10$\text{}^{-4}$ cm$\text{}^{2}$/s). The positron annihilation lifetime studies of uniaxial compression and annealing of some glassy polymers revealed variations of the shape of elementary free volumes size-distributions.
Źródło:: Acta Physica Polonica A; 1999, 95, 4; 659-662
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction
Autorzy:: Kreshchuk, A. M.
Novikov, S. V.
Savel'ev, I. G.
Polyanskaya, T. A.
Pődör, B.
Reményi, G.
Kovács, Gy.
Powiązania:: https://bibliotekanauki.pl/articles/1991650.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.-i
Opis:: The energy relaxation in two-dimensional electron gas in In$\text{}_{0.53}$Ga$\text{}_{0.47}$As/InP has been studied in a wide range of electron temperatures (from 0.1 to 10 K). The energy loss rate of electrons is controlled by the interaction of electrons with the piezoelectric potential of acoustic phonons. The value of the piezoelectric constant for InGaAs lattice-matched to InP is deduced from theoretical fits of the experimental data: h$\text{}_{14}$=(1.1±0.1)×10$\text{}^{7}$ V/cm. Available data for the piezoelectric constant of In$\text{}_{x}$Ga$\text{}_{1-x}$As are discussed in the light of the results of this work.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 415-420
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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